Magnetic properties of n-GaMnN thin films

G. T. Thaler; M. E. Overberg; B. Gila; R. Frazier; C. R. Abernathy; S. J. Pearton; J. S. Lee; S. Y. Lee; Y. D. Park; Z. G. Khim; J. Kim; F. Ren

doi:10.1063/1.1481533

Magnetic properties of n-GaMnN thin films

G. T. Thaler, M. E. Overberg, B. Gila, R. Frazier, C. R. Abernathy, S. J. Pearton, J. S. Lee, S. Y. Lee, Y. D. Park, Z. G. Khim, J. Kim, F. Ren

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246 Citations (Scopus)

Abstract

GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a T_C above room temperature.

Original language	English
Pages (from-to)	3964-3966
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	21
DOIs	https://doi.org/10.1063/1.1481533
Publication status	Published - 2002 May 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Magnetic properties of n-GaMnN thin films",

abstract = "GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.",

author = "Thaler, {G. T.} and Overberg, {M. E.} and B. Gila and R. Frazier and Abernathy, {C. R.} and Pearton, {S. J.} and Lee, {J. S.} and Lee, {S. Y.} and Park, {Y. D.} and Khim, {Z. G.} and J. Kim and F. Ren",

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month = may,

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doi = "10.1063/1.1481533",

language = "English",

volume = "80",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Magnetic properties of n-GaMnN thin films

AU - Thaler, G. T.

AU - Overberg, M. E.

AU - Gila, B.

AU - Frazier, R.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Lee, J. S.

AU - Lee, S. Y.

AU - Park, Y. D.

AU - Khim, Z. G.

AU - Kim, J.

AU - Ren, F.

PY - 2002/5/27

Y1 - 2002/5/27

N2 - GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.

AB - GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.

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U2 - 10.1063/1.1481533

DO - 10.1063/1.1481533

M3 - Article

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VL - 80

SP - 3964

EP - 3966

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Magnetic properties of n-GaMnN thin films

Abstract

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