Abstract
GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.
Original language | English |
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Pages (from-to) | 3964-3966 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2002 May 27 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)