GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2002 May 27|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)