Magnetic properties of n-GaMnN thin films

G. T. Thaler; M. E. Overberg; B. Gila; R. Frazier; C. R. Abernathy; S. J. Pearton; J. S. Lee; S. Y. Lee; Y. D. Park; Z. G. Khim; J. Kim; F. Ren

doi:10.1063/1.1481533

Magnetic properties of n-GaMnN thin films

G. T. Thaler
, M. E. Overberg
, B. Gila
, R. Frazier
, C. R. Abernathy
, S. J. Pearton
, J. S. Lee
, S. Y. Lee
, Y. D. Park
, Z. G. Khim
, J. Kim
, F. Ren

Research output: Contribution to journal › Article › peer-review

352 Citations (Scopus)

Abstract

GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a T_C above room temperature.

Original language	English
Pages (from-to)	3964-3966
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	21
DOIs	https://doi.org/10.1063/1.1481533
Publication status	Published - 2002 May 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1481533

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@article{b465ed4cc2d1488c8aea097c4b4f49d4,

title = "Magnetic properties of n-GaMnN thin films",

abstract = "GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.\% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9\% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3\% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.",

author = "Thaler, \{G. T.\} and Overberg, \{M. E.\} and B. Gila and R. Frazier and Abernathy, \{C. R.\} and Pearton, \{S. J.\} and Lee, \{J. S.\} and Lee, \{S. Y.\} and Park, \{Y. D.\} and Khim, \{Z. G.\} and J. Kim and F. Ren",

year = "2002",

month = may,

day = "27",

doi = "10.1063/1.1481533",

language = "English",

volume = "80",

pages = "3964--3966",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

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TY - JOUR

T1 - Magnetic properties of n-GaMnN thin films

AU - Thaler, G. T.

AU - Overberg, M. E.

AU - Gila, B.

AU - Frazier, R.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Lee, J. S.

AU - Lee, S. Y.

AU - Park, Y. D.

AU - Khim, Z. G.

AU - Kim, J.

AU - Ren, F.

PY - 2002/5/27

Y1 - 2002/5/27

N2 - GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.

AB - GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.

UR - https://www.scopus.com/pages/publications/79956035479

U2 - 10.1063/1.1481533

DO - 10.1063/1.1481533

M3 - Article

AN - SCOPUS:79956035479

SN - 0003-6951

VL - 80

SP - 3964

EP - 3966

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Magnetic properties of n-GaMnN thin films

Abstract

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