Magnetic properties of spin valves with antiferromagnetic CrMnPt deposited at various Ar pressures

Gi Back Park; Jin Oh Song; Seong Rae Lee

doi:10.1063/1.1846557

Magnetic properties of spin valves with antiferromagnetic CrMnPt deposited at various Ar pressures

Gi Back Park, Jin Oh Song, Seong Rae Lee

Research output: Contribution to journal › Article › peer-review

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Abstract

The dependence of the giant magnetoresistance (MR) ratio and exchange bias field (Hex) on the argon deposition pressure (PAr) of antiferromagnetic CrMnPt film for top spin valves was investigated. The MR ratio was enhanced from 5.0% to 8.3% as the PAr of CrMnPt film increased from 2 to 15 mTorr. Hex also increased from 150 to 300 Oe. These significant enhancements in the magnetic properties were correlated with microstructural changes and body-centered-tetragonal (bct) phase change reaction in the antiferromagnetic film. The bct phase change was promoted at high PAr because of the microstructural defects. The blocking temperature (TB) and the exchange anisotropy energy (Jex) were higher at high PAr owing to the promotion of bct phase change.

Original language	English
Article number	10N701
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1846557
Publication status	Published - 2005 May 15

Bibliographical note

Funding Information:
This work was supported by the Korea Ministry of Science and Technology under the National Research Laboratory program the Korea Research Foundation Grant No. (KRF-2004–005–C00068).

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Magnetic properties of spin valves with antiferromagnetic CrMnPt deposited at various Ar pressures",

abstract = "The dependence of the giant magnetoresistance (MR) ratio and exchange bias field (Hex) on the argon deposition pressure (PAr) of antiferromagnetic CrMnPt film for top spin valves was investigated. The MR ratio was enhanced from 5.0% to 8.3% as the PAr of CrMnPt film increased from 2 to 15 mTorr. Hex also increased from 150 to 300 Oe. These significant enhancements in the magnetic properties were correlated with microstructural changes and body-centered-tetragonal (bct) phase change reaction in the antiferromagnetic film. The bct phase change was promoted at high PAr because of the microstructural defects. The blocking temperature (TB) and the exchange anisotropy energy (Jex) were higher at high PAr owing to the promotion of bct phase change.",

author = "Park, {Gi Back} and Song, {Jin Oh} and Lee, {Seong Rae}",

note = "Funding Information: This work was supported by the Korea Ministry of Science and Technology under the National Research Laboratory program the Korea Research Foundation Grant No. (KRF-2004–005–C00068). Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

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AU - Park, Gi Back

AU - Song, Jin Oh

AU - Lee, Seong Rae

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PY - 2005/5/15

Y1 - 2005/5/15

N2 - The dependence of the giant magnetoresistance (MR) ratio and exchange bias field (Hex) on the argon deposition pressure (PAr) of antiferromagnetic CrMnPt film for top spin valves was investigated. The MR ratio was enhanced from 5.0% to 8.3% as the PAr of CrMnPt film increased from 2 to 15 mTorr. Hex also increased from 150 to 300 Oe. These significant enhancements in the magnetic properties were correlated with microstructural changes and body-centered-tetragonal (bct) phase change reaction in the antiferromagnetic film. The bct phase change was promoted at high PAr because of the microstructural defects. The blocking temperature (TB) and the exchange anisotropy energy (Jex) were higher at high PAr owing to the promotion of bct phase change.

AB - The dependence of the giant magnetoresistance (MR) ratio and exchange bias field (Hex) on the argon deposition pressure (PAr) of antiferromagnetic CrMnPt film for top spin valves was investigated. The MR ratio was enhanced from 5.0% to 8.3% as the PAr of CrMnPt film increased from 2 to 15 mTorr. Hex also increased from 150 to 300 Oe. These significant enhancements in the magnetic properties were correlated with microstructural changes and body-centered-tetragonal (bct) phase change reaction in the antiferromagnetic film. The bct phase change was promoted at high PAr because of the microstructural defects. The blocking temperature (TB) and the exchange anisotropy energy (Jex) were higher at high PAr owing to the promotion of bct phase change.

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Magnetic properties of spin valves with antiferromagnetic CrMnPt deposited at various Ar pressures

Abstract

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