Magnetic tunnel junctions comprising amorphous NiFeSiB and CoFeSiB free layers

Young Keun Kim

doi:10.1016/j.jmmm.2006.01.124

Magnetic tunnel junctions comprising amorphous NiFeSiB and CoFeSiB free layers

Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Magnetic and magneto-transport behaviors of magnetic tunnel junctions (MTJs) incorporating newly developed amorphous NiFeSiB and CoFeSiB as free layers were investigated. Both experimental and theoretical approaches were carried out to understand the details of switching characteristics. The MTJs with traditional free layer materials such as NiFe and CoFe were also fabricated and compared. The studied amorphous ferromagnets appeared beneficial for reducing switching fields without loosing tunnelling magnetoresistive outputs. Further layer thickness, composition, and MTJ structure optimization are expected.

Original language	English
Pages (from-to)	79-82
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	304
Issue number	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.01.124
Publication status	Published - 2006 Sept

Keywords

Amorphous ferromagnetic materials
CoFeSiB
Magnetic tunnel junctions
NiFeSiB

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2006.01.124

Cite this

@article{861aed02ecb540c98c5ecc9a1fb49cf1,

title = "Magnetic tunnel junctions comprising amorphous NiFeSiB and CoFeSiB free layers",

abstract = "Magnetic and magneto-transport behaviors of magnetic tunnel junctions (MTJs) incorporating newly developed amorphous NiFeSiB and CoFeSiB as free layers were investigated. Both experimental and theoretical approaches were carried out to understand the details of switching characteristics. The MTJs with traditional free layer materials such as NiFe and CoFe were also fabricated and compared. The studied amorphous ferromagnets appeared beneficial for reducing switching fields without loosing tunnelling magnetoresistive outputs. Further layer thickness, composition, and MTJ structure optimization are expected.",

keywords = "Amorphous ferromagnetic materials, CoFeSiB, Magnetic tunnel junctions, NiFeSiB",

author = "Kim, {Young Keun}",

note = "Funding Information: The author appreciates the valuable comments and assistance from Mr. B.C. Chun, Mr. I. Yoo, Mr. B.S. Oh, Mr. S.P. Ko, Ms. J.Y. Hwang, Prof. J.R. Rhee, Dr. W. Park, and Dr. T. Kim. The support of the DuPont Young Professor Fellowship is acknowledged. This work was supported by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program, and by Grant M10500000105-05J0000-10510 from the National Research Laboratory Program of the Korea Science and Engineering Foundation. ",

year = "2006",

month = sep,

doi = "10.1016/j.jmmm.2006.01.124",

language = "English",

volume = "304",

pages = "79--82",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Magnetic tunnel junctions comprising amorphous NiFeSiB and CoFeSiB free layers

AU - Kim, Young Keun

N1 - Funding Information: The author appreciates the valuable comments and assistance from Mr. B.C. Chun, Mr. I. Yoo, Mr. B.S. Oh, Mr. S.P. Ko, Ms. J.Y. Hwang, Prof. J.R. Rhee, Dr. W. Park, and Dr. T. Kim. The support of the DuPont Young Professor Fellowship is acknowledged. This work was supported by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program, and by Grant M10500000105-05J0000-10510 from the National Research Laboratory Program of the Korea Science and Engineering Foundation.

PY - 2006/9

Y1 - 2006/9

N2 - Magnetic and magneto-transport behaviors of magnetic tunnel junctions (MTJs) incorporating newly developed amorphous NiFeSiB and CoFeSiB as free layers were investigated. Both experimental and theoretical approaches were carried out to understand the details of switching characteristics. The MTJs with traditional free layer materials such as NiFe and CoFe were also fabricated and compared. The studied amorphous ferromagnets appeared beneficial for reducing switching fields without loosing tunnelling magnetoresistive outputs. Further layer thickness, composition, and MTJ structure optimization are expected.

AB - Magnetic and magneto-transport behaviors of magnetic tunnel junctions (MTJs) incorporating newly developed amorphous NiFeSiB and CoFeSiB as free layers were investigated. Both experimental and theoretical approaches were carried out to understand the details of switching characteristics. The MTJs with traditional free layer materials such as NiFe and CoFe were also fabricated and compared. The studied amorphous ferromagnets appeared beneficial for reducing switching fields without loosing tunnelling magnetoresistive outputs. Further layer thickness, composition, and MTJ structure optimization are expected.

KW - Amorphous ferromagnetic materials

KW - CoFeSiB

KW - Magnetic tunnel junctions

KW - NiFeSiB

UR - http://www.scopus.com/inward/record.url?scp=33646865943&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.01.124

DO - 10.1016/j.jmmm.2006.01.124

M3 - Article

AN - SCOPUS:33646865943

SN - 0304-8853

VL - 304

SP - 79

EP - 82

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

Magnetic tunnel junctions comprising amorphous NiFeSiB and CoFeSiB free layers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this