Magnetic tunnel junctions comprising amorphous NiFeSiB and CoFeSiB free layers

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15 Citations (Scopus)

Abstract

Magnetic and magneto-transport behaviors of magnetic tunnel junctions (MTJs) incorporating newly developed amorphous NiFeSiB and CoFeSiB as free layers were investigated. Both experimental and theoretical approaches were carried out to understand the details of switching characteristics. The MTJs with traditional free layer materials such as NiFe and CoFe were also fabricated and compared. The studied amorphous ferromagnets appeared beneficial for reducing switching fields without loosing tunnelling magnetoresistive outputs. Further layer thickness, composition, and MTJ structure optimization are expected.

Original languageEnglish
Pages (from-to)79-82
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sept

Bibliographical note

Funding Information:
The author appreciates the valuable comments and assistance from Mr. B.C. Chun, Mr. I. Yoo, Mr. B.S. Oh, Mr. S.P. Ko, Ms. J.Y. Hwang, Prof. J.R. Rhee, Dr. W. Park, and Dr. T. Kim. The support of the DuPont Young Professor Fellowship is acknowledged. This work was supported by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program, and by Grant M10500000105-05J0000-10510 from the National Research Laboratory Program of the Korea Science and Engineering Foundation.

Keywords

  • Amorphous ferromagnetic materials
  • CoFeSiB
  • Magnetic tunnel junctions
  • NiFeSiB

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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