Magnetic tunnel junctions stabilized by modified synthetic antiferromagnets

Ilsang Yoo; Seong Rae Lee; Young Keun Kim

doi:10.1002/pssa.200304600

Magnetic tunnel junctions stabilized by modified synthetic antiferromagnets

Ilsang Yoo, Seong Rae Lee, Young Keun Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In a conventional magnetic tunnel junction (MTJ) using a synthetic antiferromagnet (SAF), the stray field from the pinned layer often causes poor switching asymmetry due to the thickness difference between two ferromagnetic layers separated by a Ru spacer [1]. To attain good bias point control, a modified synthetic antiferromagnet (MSAF) structure, consisting of an additional Ru/ferromagnet onto the SAF, was suggested. In this computational simulation study, we evaluated MR transfer characteristics with an attention paid on the bias point of an MTJ with an MSAF using LLG equation and we could find the better switching behaviour of free layer in MSAF as the size decreases.

Original language	English
Pages (from-to)	1676-1679
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	8
DOIs	https://doi.org/10.1002/pssa.200304600
Publication status	Published - 2004 Jun

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{64f2a12f25c14afe910f8387d3e747b4,

title = "Magnetic tunnel junctions stabilized by modified synthetic antiferromagnets",

abstract = "In a conventional magnetic tunnel junction (MTJ) using a synthetic antiferromagnet (SAF), the stray field from the pinned layer often causes poor switching asymmetry due to the thickness difference between two ferromagnetic layers separated by a Ru spacer [1]. To attain good bias point control, a modified synthetic antiferromagnet (MSAF) structure, consisting of an additional Ru/ferromagnet onto the SAF, was suggested. In this computational simulation study, we evaluated MR transfer characteristics with an attention paid on the bias point of an MTJ with an MSAF using LLG equation and we could find the better switching behaviour of free layer in MSAF as the size decreases.",

author = "Ilsang Yoo and Lee, {Seong Rae} and Kim, {Young Keun}",

year = "2004",

month = jun,

doi = "10.1002/pssa.200304600",

language = "English",

volume = "201",

pages = "1676--1679",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "8",

}

TY - JOUR

T1 - Magnetic tunnel junctions stabilized by modified synthetic antiferromagnets

AU - Yoo, Ilsang

AU - Lee, Seong Rae

AU - Kim, Young Keun

PY - 2004/6

Y1 - 2004/6

N2 - In a conventional magnetic tunnel junction (MTJ) using a synthetic antiferromagnet (SAF), the stray field from the pinned layer often causes poor switching asymmetry due to the thickness difference between two ferromagnetic layers separated by a Ru spacer [1]. To attain good bias point control, a modified synthetic antiferromagnet (MSAF) structure, consisting of an additional Ru/ferromagnet onto the SAF, was suggested. In this computational simulation study, we evaluated MR transfer characteristics with an attention paid on the bias point of an MTJ with an MSAF using LLG equation and we could find the better switching behaviour of free layer in MSAF as the size decreases.

AB - In a conventional magnetic tunnel junction (MTJ) using a synthetic antiferromagnet (SAF), the stray field from the pinned layer often causes poor switching asymmetry due to the thickness difference between two ferromagnetic layers separated by a Ru spacer [1]. To attain good bias point control, a modified synthetic antiferromagnet (MSAF) structure, consisting of an additional Ru/ferromagnet onto the SAF, was suggested. In this computational simulation study, we evaluated MR transfer characteristics with an attention paid on the bias point of an MTJ with an MSAF using LLG equation and we could find the better switching behaviour of free layer in MSAF as the size decreases.

UR - http://www.scopus.com/inward/record.url?scp=3142730059&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142730059&partnerID=8YFLogxK

U2 - 10.1002/pssa.200304600

DO - 10.1002/pssa.200304600

M3 - Article

AN - SCOPUS:3142730059

SN - 0031-8965

VL - 201

SP - 1676

EP - 1679

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 8

ER -

Magnetic tunnel junctions stabilized by modified synthetic antiferromagnets

Abstract

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