Magnetization reorientation in Gax Mn1-x As films: Planar Hall effect measurements

Sunjae Chung, Sanghoon Lee, X. Liu, J. K. Furdyna

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11 Citations (Scopus)


The process of magnetization reorientation in a ferromagnetic semiconductor GaMnAs films was investigated using planar Hall effect measurements. In addition to the well-known two-step switching behavior that occurs during this process, we have observed two additional distinct features in field scan data of the planar Hall resistance (PHR). First, the region of the external field required to begin and complete the reorientation of magnetization from one easy axis to another strongly depends on the direction of the applied field. And second, the maximum amplitude of PHR is significantly reduced during magnetization reversal when the applied field is oriented near one of the easy axes of the GaMnAs film. We provide an explanation of these phenomena using the magnetic field dependence of the free-energy density and assuming the coexistence of multiple domains with three different directions of magnetization in the sample.

Original languageEnglish
Article number155209
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number15
Publication statusPublished - 2010 Apr 19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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