Magnetization switching and tunneling magnetoresistance effects of synthetic antiferromagnet free layers consisting of amorphous NiFeSiB

Byong Sun Chun; Ilsang Yoo; Young Keun Kim; Jae Youn Hwang; Jang Roh Rhee; Taewan Kim; Wanjun Park

doi:10.1063/1.2033128

Magnetization switching and tunneling magnetoresistance effects of synthetic antiferromagnet free layers consisting of amorphous NiFeSiB

Byong Sun Chun, Ilsang Yoo, Young Keun Kim, Jae Youn Hwang, Jang Roh Rhee, Taewan Kim, Wanjun Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A synthetic antiferromagnet (SAF) structure comprising of ferromagnetic amorphous Ni16 Fe62 Si8 B14 layers has been devised and employed as a free layer of magnetic tunnel junctions (MTJs) to enhance cell switching performance. We observed -0.03 erg cm2 of exchange coupling energy (Jex) by inserting a 0.5 nm Ru layer in between NiFeSiB layers. In Si SiO2 Ta 45Ru 9.5IrMn 10CoFe 7 AlOx 1.5 (single NiFeSiB 7) or [NiFeSiB (t) Ru 0.5NiFeSiB (7-t)] Ru 60 (nm) MTJ structures, we found size dependence of the switching field originating from the lower Jex both experimentally and by simulation. The NiFeSiB SAF structure showed lower switching field than traditional CoFe and CoFeB SAF structures. This is because NiFeSiB possesses low saturation magnetization (Ms =800 emu cm3) and high anisotropy constant (Ku =2,700 erg cm3). These properties were proven beneficial for the switching characteristics such as reducing the coercivity (Hc) and increasing the sensitivity in micrometer to submicrometer sized elements.

Original language	English
Article number	082508
Journal	Applied Physics Letters
Volume	87
Issue number	8
DOIs	https://doi.org/10.1063/1.2033128
Publication status	Published - 2005 Aug 22

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{61fb61fd08724143b57d5f725c7a158b,

title = "Magnetization switching and tunneling magnetoresistance effects of synthetic antiferromagnet free layers consisting of amorphous NiFeSiB",

abstract = "A synthetic antiferromagnet (SAF) structure comprising of ferromagnetic amorphous Ni16 Fe62 Si8 B14 layers has been devised and employed as a free layer of magnetic tunnel junctions (MTJs) to enhance cell switching performance. We observed -0.03 erg cm2 of exchange coupling energy (Jex) by inserting a 0.5 nm Ru layer in between NiFeSiB layers. In Si SiO2 Ta 45Ru 9.5IrMn 10CoFe 7 AlOx 1.5 (single NiFeSiB 7) or [NiFeSiB (t) Ru 0.5NiFeSiB (7-t)] Ru 60 (nm) MTJ structures, we found size dependence of the switching field originating from the lower Jex both experimentally and by simulation. The NiFeSiB SAF structure showed lower switching field than traditional CoFe and CoFeB SAF structures. This is because NiFeSiB possesses low saturation magnetization (Ms =800 emu cm3) and high anisotropy constant (Ku =2,700 erg cm3). These properties were proven beneficial for the switching characteristics such as reducing the coercivity (Hc) and increasing the sensitivity in micrometer to submicrometer sized elements.",

author = "Chun, {Byong Sun} and Ilsang Yoo and Kim, {Young Keun} and Hwang, {Jae Youn} and Rhee, {Jang Roh} and Taewan Kim and Wanjun Park",

note = "Funding Information: This work was supported by the Korea Ministry of Science and Technology under contract National Research Laboratory Program, and by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.",

year = "2005",

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doi = "10.1063/1.2033128",

language = "English",

volume = "87",

journal = "Applied Physics Letters",

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T1 - Magnetization switching and tunneling magnetoresistance effects of synthetic antiferromagnet free layers consisting of amorphous NiFeSiB

AU - Chun, Byong Sun

AU - Yoo, Ilsang

AU - Kim, Young Keun

AU - Hwang, Jae Youn

AU - Rhee, Jang Roh

AU - Kim, Taewan

AU - Park, Wanjun

N1 - Funding Information: This work was supported by the Korea Ministry of Science and Technology under contract National Research Laboratory Program, and by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.

PY - 2005/8/22

Y1 - 2005/8/22

N2 - A synthetic antiferromagnet (SAF) structure comprising of ferromagnetic amorphous Ni16 Fe62 Si8 B14 layers has been devised and employed as a free layer of magnetic tunnel junctions (MTJs) to enhance cell switching performance. We observed -0.03 erg cm2 of exchange coupling energy (Jex) by inserting a 0.5 nm Ru layer in between NiFeSiB layers. In Si SiO2 Ta 45Ru 9.5IrMn 10CoFe 7 AlOx 1.5 (single NiFeSiB 7) or [NiFeSiB (t) Ru 0.5NiFeSiB (7-t)] Ru 60 (nm) MTJ structures, we found size dependence of the switching field originating from the lower Jex both experimentally and by simulation. The NiFeSiB SAF structure showed lower switching field than traditional CoFe and CoFeB SAF structures. This is because NiFeSiB possesses low saturation magnetization (Ms =800 emu cm3) and high anisotropy constant (Ku =2,700 erg cm3). These properties were proven beneficial for the switching characteristics such as reducing the coercivity (Hc) and increasing the sensitivity in micrometer to submicrometer sized elements.

AB - A synthetic antiferromagnet (SAF) structure comprising of ferromagnetic amorphous Ni16 Fe62 Si8 B14 layers has been devised and employed as a free layer of magnetic tunnel junctions (MTJs) to enhance cell switching performance. We observed -0.03 erg cm2 of exchange coupling energy (Jex) by inserting a 0.5 nm Ru layer in between NiFeSiB layers. In Si SiO2 Ta 45Ru 9.5IrMn 10CoFe 7 AlOx 1.5 (single NiFeSiB 7) or [NiFeSiB (t) Ru 0.5NiFeSiB (7-t)] Ru 60 (nm) MTJ structures, we found size dependence of the switching field originating from the lower Jex both experimentally and by simulation. The NiFeSiB SAF structure showed lower switching field than traditional CoFe and CoFeB SAF structures. This is because NiFeSiB possesses low saturation magnetization (Ms =800 emu cm3) and high anisotropy constant (Ku =2,700 erg cm3). These properties were proven beneficial for the switching characteristics such as reducing the coercivity (Hc) and increasing the sensitivity in micrometer to submicrometer sized elements.

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DO - 10.1063/1.2033128

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Magnetization switching and tunneling magnetoresistance effects of synthetic antiferromagnet free layers consisting of amorphous NiFeSiB

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