Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB

Jae Youn Hwang; Soon Sub Kim; Jang Rob Rhee; Byong Sun Chun; Il Sang You; Byung Seok Oh; Young Keun Kim; Taewan Kim; Wanjun Park

Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB

Jae Youn Hwang, Soon Sub Kim, Jang Rob Rhee, Byong Sun Chun, Il Sang You, Byung Seok Oh, Young Keun Kim, Taewan Kim, Wanjun Park

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	INTERMAG ASIA 2005
Subtitle of host publication	Digests of the IEEE International Magnetics Conference
Pages	1011
Number of pages	1
Publication status	Published - 2005
Event	INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference - Nagoya, Japan Duration: 2005 Apr 4 → 2005 Apr 8

Publication series

Name	INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

Other

Other	INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference
Country/Territory	Japan
City	Nagoya
Period	05/4/4 → 05/4/8

ASJC Scopus subject areas

Engineering(all)

Cite this

Hwang, J. Y., Kim, S. S., Rhee, J. R., Chun, B. S., You, I. S., Oh, B. S., Kim, Y. K., Kim, T., & Park, W. (2005). Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB. In INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference (pp. 1011). (INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference).

Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB. / Hwang, Jae Youn; Kim, Soon Sub; Rhee, Jang Rob et al.
INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference. 2005. p. 1011 (INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hwang, JY, Kim, SS, Rhee, JR, Chun, BS, You, IS, Oh, BS, Kim, YK, Kim, T & Park, W 2005, Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB. in INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference. INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference, pp. 1011, INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference, Nagoya, Japan, 05/4/4.

@inproceedings{b98fbea7659b47508ebbd5baf59a2010,

title = "Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB",

author = "Hwang, {Jae Youn} and Kim, {Soon Sub} and Rhee, {Jang Rob} and Chun, {Byong Sun} and You, {Il Sang} and Oh, {Byung Seok} and Kim, {Young Keun} and Taewan Kim and Wanjun Park",

year = "2005",

language = "English",

isbn = "0780390091",

series = "INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference",

pages = "1011",

booktitle = "INTERMAG ASIA 2005",

note = "INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference ; Conference date: 04-04-2005 Through 08-04-2005",

}

TY - GEN

T1 - Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB

AU - Hwang, Jae Youn

AU - Kim, Soon Sub

AU - Rhee, Jang Rob

AU - Chun, Byong Sun

AU - You, Il Sang

AU - Oh, Byung Seok

AU - Kim, Young Keun

AU - Kim, Taewan

AU - Park, Wanjun

PY - 2005

Y1 - 2005

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M3 - Conference contribution

AN - SCOPUS:28444475850

SN - 0780390091

T3 - INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

SP - 1011

BT - INTERMAG ASIA 2005

T2 - INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

Y2 - 4 April 2005 through 8 April 2005

ER -

Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB

Publication series

Other

ASJC Scopus subject areas

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