Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Byong Sun Chun, Jae Youn Hwang, Jang Roh Rhee, Taewan Kim, Shin Saito, Satoru Yoshimura, Masakiyo Tsunoda, Migaku Takahashi, Young Keun Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.

Original languageEnglish
Pages (from-to)e223-e225
JournalJournal of Magnetism and Magnetic Materials
Issue number2 SPEC. ISS.
Publication statusPublished - 2006 Aug

Bibliographical note

Funding Information:
This work was supported by the Korea Ministry of Science and Technology under contract National Research Laboratory Program, and by Grant No. R01-2003-00-10644-0 from the Basic Research Program of the Korea Science and Engineering Foundation, and by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.


  • Amorphous ferromagnetic materials
  • CoFeSiB
  • Magnetic tunnel junctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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