Abstract
We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.
| Original language | English |
|---|---|
| Article number | 10C902 |
| Journal | Journal of Applied Physics |
| Volume | 97 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2005 May 15 |
Bibliographical note
Funding Information:This work supported by the Korea Ministry of Science and Technology under the National Research Laboratory program and Samsung Advanced Institute of Technology.
ASJC Scopus subject areas
- General Physics and Astronomy
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