Magnetoresistance of a ferromagnet/semiconductor interface with a strong Rashba effect

Seong Been Kim; Youn Ho Park; Hyung jun Kim; Joonyeon Chang; Hyun Cheol Koo

doi:10.1016/j.tsf.2020.138047

Magnetoresistance of a ferromagnet/semiconductor interface with a strong Rashba effect

Seong Been Kim, Youn Ho Park, Hyung jun Kim, Joonyeon Chang, Hyun Cheol Koo

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Spin Hall and Rashba effects are two most fascinating phenomena in the field of spintronics because these effects make it possible to control the spin information by the electrical field. By exploiting spin Hall effect, the magnetoresistances along the longitudinal and transverse directions are modulated at room temperature by controlling the magnetization direction of ferromagnet and the spin precession angle of an InAs-based Rashba channel. The various transport results are explained by the spin current induced by inverse spin Hall effect in a strong Rashba system. This enhancement of operation temperature is implemented by utilizing spin drift effect as well as spin diffusion effect. Also, coherent spin precession is obtained by the injection of the spin current from ferromagnet edge into the quantum well channel.

Original language	English
Article number	138047
Journal	Thin Solid Films
Volume	706
DOIs	https://doi.org/10.1016/j.tsf.2020.138047
Publication status	Published - 2020 Jul 31

Bibliographical note

Funding Information:
This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project number SRFC-MA1502-06. We acknowledge National Research and Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2019M3F3A1A02071509) and KIST and KU-KIST Institutional Programs for providing fabrication and measurement systems.

Funding Information:
This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project number SRFC-MA1502-06 . We acknowledge National Research and Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( 2019M3F3A1A02071509 ) and KIST and KU-KIST Institutional Programs for providing fabrication and measurement systems.

Publisher Copyright:
© 2020 Elsevier B.V.

Keywords

Indium arsenide quantum wells
Magnetoresistance
Rashba effect
Spin Hall effect
Spin precession

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2020.138047

Cite this

@article{e9de078532bb4c7ca0e0640a47a0e581,

title = "Magnetoresistance of a ferromagnet/semiconductor interface with a strong Rashba effect",

abstract = "Spin Hall and Rashba effects are two most fascinating phenomena in the field of spintronics because these effects make it possible to control the spin information by the electrical field. By exploiting spin Hall effect, the magnetoresistances along the longitudinal and transverse directions are modulated at room temperature by controlling the magnetization direction of ferromagnet and the spin precession angle of an InAs-based Rashba channel. The various transport results are explained by the spin current induced by inverse spin Hall effect in a strong Rashba system. This enhancement of operation temperature is implemented by utilizing spin drift effect as well as spin diffusion effect. Also, coherent spin precession is obtained by the injection of the spin current from ferromagnet edge into the quantum well channel.",

keywords = "Indium arsenide quantum wells, Magnetoresistance, Rashba effect, Spin Hall effect, Spin precession",

author = "Kim, {Seong Been} and Park, {Youn Ho} and Kim, {Hyung jun} and Joonyeon Chang and Koo, {Hyun Cheol}",

note = "Funding Information: This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project number SRFC-MA1502-06. We acknowledge National Research and Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2019M3F3A1A02071509) and KIST and KU-KIST Institutional Programs for providing fabrication and measurement systems. Funding Information: This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project number SRFC-MA1502-06 . We acknowledge National Research and Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( 2019M3F3A1A02071509 ) and KIST and KU-KIST Institutional Programs for providing fabrication and measurement systems. Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2020.138047",

language = "English",

volume = "706",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Magnetoresistance of a ferromagnet/semiconductor interface with a strong Rashba effect

AU - Kim, Seong Been

AU - Park, Youn Ho

AU - Kim, Hyung jun

AU - Chang, Joonyeon

AU - Koo, Hyun Cheol

N1 - Funding Information: This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project number SRFC-MA1502-06. We acknowledge National Research and Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2019M3F3A1A02071509) and KIST and KU-KIST Institutional Programs for providing fabrication and measurement systems. Funding Information: This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project number SRFC-MA1502-06 . We acknowledge National Research and Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( 2019M3F3A1A02071509 ) and KIST and KU-KIST Institutional Programs for providing fabrication and measurement systems. Publisher Copyright: © 2020 Elsevier B.V.

PY - 2020/7/31

Y1 - 2020/7/31

N2 - Spin Hall and Rashba effects are two most fascinating phenomena in the field of spintronics because these effects make it possible to control the spin information by the electrical field. By exploiting spin Hall effect, the magnetoresistances along the longitudinal and transverse directions are modulated at room temperature by controlling the magnetization direction of ferromagnet and the spin precession angle of an InAs-based Rashba channel. The various transport results are explained by the spin current induced by inverse spin Hall effect in a strong Rashba system. This enhancement of operation temperature is implemented by utilizing spin drift effect as well as spin diffusion effect. Also, coherent spin precession is obtained by the injection of the spin current from ferromagnet edge into the quantum well channel.

AB - Spin Hall and Rashba effects are two most fascinating phenomena in the field of spintronics because these effects make it possible to control the spin information by the electrical field. By exploiting spin Hall effect, the magnetoresistances along the longitudinal and transverse directions are modulated at room temperature by controlling the magnetization direction of ferromagnet and the spin precession angle of an InAs-based Rashba channel. The various transport results are explained by the spin current induced by inverse spin Hall effect in a strong Rashba system. This enhancement of operation temperature is implemented by utilizing spin drift effect as well as spin diffusion effect. Also, coherent spin precession is obtained by the injection of the spin current from ferromagnet edge into the quantum well channel.

KW - Indium arsenide quantum wells

KW - Magnetoresistance

KW - Rashba effect

KW - Spin Hall effect

KW - Spin precession

UR - http://www.scopus.com/inward/record.url?scp=85084789285&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2020.138047

DO - 10.1016/j.tsf.2020.138047

M3 - Article

AN - SCOPUS:85084789285

SN - 0040-6090

VL - 706

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 138047

ER -

Magnetoresistance of a ferromagnet/semiconductor interface with a strong Rashba effect

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this