Magnetoresistance of a ferromagnet/semiconductor interface with a strong Rashba effect

Seong Been Kim, Youn Ho Park, Hyung jun Kim, Joonyeon Chang, Hyun Cheol Koo

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Spin Hall and Rashba effects are two most fascinating phenomena in the field of spintronics because these effects make it possible to control the spin information by the electrical field. By exploiting spin Hall effect, the magnetoresistances along the longitudinal and transverse directions are modulated at room temperature by controlling the magnetization direction of ferromagnet and the spin precession angle of an InAs-based Rashba channel. The various transport results are explained by the spin current induced by inverse spin Hall effect in a strong Rashba system. This enhancement of operation temperature is implemented by utilizing spin drift effect as well as spin diffusion effect. Also, coherent spin precession is obtained by the injection of the spin current from ferromagnet edge into the quantum well channel.

Original languageEnglish
Article number138047
JournalThin Solid Films
Publication statusPublished - 2020 Jul 31


  • Indium arsenide quantum wells
  • Magnetoresistance
  • Rashba effect
  • Spin Hall effect
  • Spin precession

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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