Magnetoresistance of a quantum dot with spin-active interfaces

Audrey Cottet, Mahn Soo Choi

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


We study the zero-bias magnetoresistance (MR) of an interacting quantum dot connected to two ferromagnetic leads and capacitively coupled to a gate voltage source Vg. We investigate the effects of the spin-activity of the contacts between the dot and the leads by introducing an effective exchange field in an Anderson model. This spin-activity makes easier negative MR effects, and can even lead to a giant MR effect with a sign tunable with Vg. Assuming a twofold orbital degeneracy, our approach allows one to interpret in an interacting picture the MR (Vg) measured by S. Sahoo [Nature Phys. 1, 99 (2005)] in single wall carbon nanotubes with ferromagnetic contacts. If this experiment is repeated on a larger Vg range, we expect that the MR (Vg) oscillations are not regular like in the presently available data, due to Coulomb interactions.

Original languageEnglish
Article number235316
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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