Magnetoresistance variation of magnetic tunnel junctions with NiFeSiB/CoFeB free layers depending on MgO tunnel barrier thickness

Ji Ung Cho; Do Kyun Kim; Tian Xing Wang; Shinji Isogami; Masakiyo Tsunoda; Migaku Takahashi; Young Keun Kim

doi:10.1109/TMAG.2008.2003244

Magnetoresistance variation of magnetic tunnel junctions with NiFeSiB/CoFeB free layers depending on MgO tunnel barrier thickness

Ji Ung Cho, Do Kyun Kim, Tian Xing Wang, Shinji Isogami, Masakiyo Tsunoda, Migaku Takahashi, Young Keun Kim

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We developed NiFeSiB/CoFeB hybrid free-layers for magnetic tunnel junctions (MTJs) with MgO tunnel barrier layers. These junctions show tunneling magnetoresistance (TMR) ratios and resistance-area (RA) values ranging from 118-209% and 36-2380 Ω μm², respectively, obtained at room temperature. Compared to the CoFeB single free-layer case, the NiFeSiB/CoFeB hybrid free-layer approach has the advantage of lowering saturation magnetization. The low magnetization material would be effective to decrease the switching current in spin transfer torque (STT) switching. The experimental results show that the RA value depends not only on the thickness of the MgO barrier but also on the structure of the free layer used. Tunable in the TMR ratio and RA value using the design of the hybrid free-layer, our hybrid free-layered MTJs demonstrate a desirable lower RA value but a similar TMR ratio in comparison to the CoFeB free-layered ones.

Original language	English
Pages (from-to)	2547-2550
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	44
Issue number	11 PART 2
DOIs	https://doi.org/10.1109/TMAG.2008.2003244
Publication status	Published - 2008 Nov

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation through the National Research Lab Program (No. M10500000105-05J0000-10510), and Tera-level Nanode-vices Program (No. M103KC010006-06K0301-00631).

Keywords

Hybrid free layer
Low saturation magnetization
Magnetic tunnel junction
NiFeSiB

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2008.2003244

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@article{d7b3d96234e841babb1d15180b1cf20e,

title = "Magnetoresistance variation of magnetic tunnel junctions with NiFeSiB/CoFeB free layers depending on MgO tunnel barrier thickness",

abstract = "We developed NiFeSiB/CoFeB hybrid free-layers for magnetic tunnel junctions (MTJs) with MgO tunnel barrier layers. These junctions show tunneling magnetoresistance (TMR) ratios and resistance-area (RA) values ranging from 118-209% and 36-2380 Ω μm2, respectively, obtained at room temperature. Compared to the CoFeB single free-layer case, the NiFeSiB/CoFeB hybrid free-layer approach has the advantage of lowering saturation magnetization. The low magnetization material would be effective to decrease the switching current in spin transfer torque (STT) switching. The experimental results show that the RA value depends not only on the thickness of the MgO barrier but also on the structure of the free layer used. Tunable in the TMR ratio and RA value using the design of the hybrid free-layer, our hybrid free-layered MTJs demonstrate a desirable lower RA value but a similar TMR ratio in comparison to the CoFeB free-layered ones.",

keywords = "Hybrid free layer, Low saturation magnetization, Magnetic tunnel junction, NiFeSiB",

author = "Cho, {Ji Ung} and Kim, {Do Kyun} and Wang, {Tian Xing} and Shinji Isogami and Masakiyo Tsunoda and Migaku Takahashi and Kim, {Young Keun}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation through the National Research Lab Program (No. M10500000105-05J0000-10510), and Tera-level Nanode-vices Program (No. M103KC010006-06K0301-00631).",

year = "2008",

month = nov,

doi = "10.1109/TMAG.2008.2003244",

language = "English",

volume = "44",

pages = "2547--2550",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11 PART 2",

}

TY - JOUR

T1 - Magnetoresistance variation of magnetic tunnel junctions with NiFeSiB/CoFeB free layers depending on MgO tunnel barrier thickness

AU - Cho, Ji Ung

AU - Kim, Do Kyun

AU - Wang, Tian Xing

AU - Isogami, Shinji

AU - Tsunoda, Masakiyo

AU - Takahashi, Migaku

AU - Kim, Young Keun

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation through the National Research Lab Program (No. M10500000105-05J0000-10510), and Tera-level Nanode-vices Program (No. M103KC010006-06K0301-00631).

PY - 2008/11

Y1 - 2008/11

N2 - We developed NiFeSiB/CoFeB hybrid free-layers for magnetic tunnel junctions (MTJs) with MgO tunnel barrier layers. These junctions show tunneling magnetoresistance (TMR) ratios and resistance-area (RA) values ranging from 118-209% and 36-2380 Ω μm2, respectively, obtained at room temperature. Compared to the CoFeB single free-layer case, the NiFeSiB/CoFeB hybrid free-layer approach has the advantage of lowering saturation magnetization. The low magnetization material would be effective to decrease the switching current in spin transfer torque (STT) switching. The experimental results show that the RA value depends not only on the thickness of the MgO barrier but also on the structure of the free layer used. Tunable in the TMR ratio and RA value using the design of the hybrid free-layer, our hybrid free-layered MTJs demonstrate a desirable lower RA value but a similar TMR ratio in comparison to the CoFeB free-layered ones.

AB - We developed NiFeSiB/CoFeB hybrid free-layers for magnetic tunnel junctions (MTJs) with MgO tunnel barrier layers. These junctions show tunneling magnetoresistance (TMR) ratios and resistance-area (RA) values ranging from 118-209% and 36-2380 Ω μm2, respectively, obtained at room temperature. Compared to the CoFeB single free-layer case, the NiFeSiB/CoFeB hybrid free-layer approach has the advantage of lowering saturation magnetization. The low magnetization material would be effective to decrease the switching current in spin transfer torque (STT) switching. The experimental results show that the RA value depends not only on the thickness of the MgO barrier but also on the structure of the free layer used. Tunable in the TMR ratio and RA value using the design of the hybrid free-layer, our hybrid free-layered MTJs demonstrate a desirable lower RA value but a similar TMR ratio in comparison to the CoFeB free-layered ones.

KW - Hybrid free layer

KW - Low saturation magnetization

KW - Magnetic tunnel junction

KW - NiFeSiB

UR - http://www.scopus.com/inward/record.url?scp=85130088027&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2008.2003244

DO - 10.1109/TMAG.2008.2003244

M3 - Article

AN - SCOPUS:66549112129

SN - 0018-9464

VL - 44

SP - 2547

EP - 2550

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 11 PART 2

ER -

Magnetoresistance variation of magnetic tunnel junctions with NiFeSiB/CoFeB free layers depending on MgO tunnel barrier thickness

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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