Magnetostriction of Sm-Fe and Sm-Fe-B thin films fabricated by RF magnetron sputtering

S. H. Lim; Y. S. Choi; S. H. Han; H. J. Kim; T. Shima; H. Fujimori

doi:10.1016/S0304-8853(98)00220-0

Magnetostriction of Sm-Fe and Sm-Fe-B thin films fabricated by RF magnetron sputtering

S. H. Lim, Y. S. Choi, S. H. Han, H. J. Kim, T. Shima, H. Fujimori

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Magnetostriction of amorphous Sm-Fe and Sm-Fe-B thin films is systematically investigated over a wide composition range from 14.1 to 71.7 at% Sm. In the case of Sm-Fe-B thin films, the amount of B is varied from 0.3 to 0.8 at%. Good magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both Sm-Fe and Sm-Fe-B thin films, although better properties are observed in B containing Sm-Fe thin films. At a magnetic field of 100 Oe, for example, the magnitude of magnetostriction is -350 ppm in a Sm-Fe thin film and it is -470 ppm in a B containing Sm-Fe thin film. With their excellent magnetostrictive characteristics, the present Sm-Fe and Sm-Fe-B thin films are considered to be suitable for Si based microdevices.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Journal of Magnetism and Magnetic Materials
Volume	189
Issue number	1
DOIs	https://doi.org/10.1016/S0304-8853(98)00220-0
Publication status	Published - 1998 Oct 20
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Ministry of Science and Technology and the Ministry of Industry and Energy in Korea under the Micromachine Technology Development Program.

Keywords

Amorphous
B addition
Magnetostriction - giant
Sputtering
Thin films - Sm-Fe

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(98)00220-0

Cite this

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title = "Magnetostriction of Sm-Fe and Sm-Fe-B thin films fabricated by RF magnetron sputtering",

abstract = "Magnetostriction of amorphous Sm-Fe and Sm-Fe-B thin films is systematically investigated over a wide composition range from 14.1 to 71.7 at% Sm. In the case of Sm-Fe-B thin films, the amount of B is varied from 0.3 to 0.8 at%. Good magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both Sm-Fe and Sm-Fe-B thin films, although better properties are observed in B containing Sm-Fe thin films. At a magnetic field of 100 Oe, for example, the magnitude of magnetostriction is -350 ppm in a Sm-Fe thin film and it is -470 ppm in a B containing Sm-Fe thin film. With their excellent magnetostrictive characteristics, the present Sm-Fe and Sm-Fe-B thin films are considered to be suitable for Si based microdevices.",

keywords = "Amorphous, B addition, Magnetostriction - giant, Sputtering, Thin films - Sm-Fe",

author = "Lim, {S. H.} and Choi, {Y. S.} and Han, {S. H.} and Kim, {H. J.} and T. Shima and H. Fujimori",

note = "Funding Information: This work was supported by the Ministry of Science and Technology and the Ministry of Industry and Energy in Korea under the Micromachine Technology Development Program.",

year = "1998",

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doi = "10.1016/S0304-8853(98)00220-0",

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T1 - Magnetostriction of Sm-Fe and Sm-Fe-B thin films fabricated by RF magnetron sputtering

AU - Lim, S. H.

AU - Choi, Y. S.

AU - Han, S. H.

AU - Kim, H. J.

AU - Shima, T.

AU - Fujimori, H.

N1 - Funding Information: This work was supported by the Ministry of Science and Technology and the Ministry of Industry and Energy in Korea under the Micromachine Technology Development Program.

PY - 1998/10/20

Y1 - 1998/10/20

N2 - Magnetostriction of amorphous Sm-Fe and Sm-Fe-B thin films is systematically investigated over a wide composition range from 14.1 to 71.7 at% Sm. In the case of Sm-Fe-B thin films, the amount of B is varied from 0.3 to 0.8 at%. Good magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both Sm-Fe and Sm-Fe-B thin films, although better properties are observed in B containing Sm-Fe thin films. At a magnetic field of 100 Oe, for example, the magnitude of magnetostriction is -350 ppm in a Sm-Fe thin film and it is -470 ppm in a B containing Sm-Fe thin film. With their excellent magnetostrictive characteristics, the present Sm-Fe and Sm-Fe-B thin films are considered to be suitable for Si based microdevices.

AB - Magnetostriction of amorphous Sm-Fe and Sm-Fe-B thin films is systematically investigated over a wide composition range from 14.1 to 71.7 at% Sm. In the case of Sm-Fe-B thin films, the amount of B is varied from 0.3 to 0.8 at%. Good magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both Sm-Fe and Sm-Fe-B thin films, although better properties are observed in B containing Sm-Fe thin films. At a magnetic field of 100 Oe, for example, the magnitude of magnetostriction is -350 ppm in a Sm-Fe thin film and it is -470 ppm in a B containing Sm-Fe thin film. With their excellent magnetostrictive characteristics, the present Sm-Fe and Sm-Fe-B thin films are considered to be suitable for Si based microdevices.

KW - Amorphous

KW - B addition

KW - Magnetostriction - giant

KW - Sputtering

KW - Thin films - Sm-Fe

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Magnetostriction of Sm-Fe and Sm-Fe-B thin films fabricated by RF magnetron sputtering

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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