Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

In Chang Chu, Min Sung Song, Byong Sun Chun, Seong Rae Lee, Young Keun Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlOx)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.

Original languageEnglish
Pages (from-to)348-351
Number of pages4
JournalSolid State Communications
Volume135
Issue number6
DOIs
Publication statusPublished - 2005 Aug

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory Program and by the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21st century Frontier Programs. Y.K. Kim acknowledges the support of the Dupont Young Professor Fellowship.

Keywords

  • A. Nano-oxide layer
  • D. Interlayer diffusion
  • D. Magnetic tunnel junction

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry

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