Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

In Chang Chu; Min Sung Song; Byong Sun Chun; Seong Rae Lee; Young Keun Kim

doi:10.1016/j.ssc.2005.05.031

Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

In Chang Chu
, Min Sung Song
, Byong Sun Chun
, Seong Rae Lee
, Young Keun Kim^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlO_x)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.

Original language	English
Pages (from-to)	348-351
Number of pages	4
Journal	Solid State Communications
Volume	135
Issue number	6
DOIs	https://doi.org/10.1016/j.ssc.2005.05.031
Publication status	Published - 2005 Aug

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory Program and by the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21st century Frontier Programs. Y.K. Kim acknowledges the support of the Dupont Young Professor Fellowship.

Keywords

A. Nano-oxide layer
D. Interlayer diffusion
D. Magnetic tunnel junction

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2005.05.031

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@article{9eaf3b362331475f8124db5a7bd5049e,

title = "Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing",

abstract = "Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlOx)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.",

keywords = "A. Nano-oxide layer, D. Interlayer diffusion, D. Magnetic tunnel junction",

author = "Chu, \{In Chang\} and Song, \{Min Sung\} and Chun, \{Byong Sun\} and Lee, \{Seong Rae\} and Kim, \{Young Keun\}",

note = "Funding Information: This work was supported by the National Research Laboratory Program and by the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21st century Frontier Programs. Y.K. Kim acknowledges the support of the Dupont Young Professor Fellowship.",

year = "2005",

month = aug,

doi = "10.1016/j.ssc.2005.05.031",

language = "English",

volume = "135",

pages = "348--351",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "6",

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TY - JOUR

T1 - Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

AU - Chu, In Chang

AU - Song, Min Sung

AU - Chun, Byong Sun

AU - Lee, Seong Rae

AU - Kim, Young Keun

N1 - Funding Information: This work was supported by the National Research Laboratory Program and by the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21st century Frontier Programs. Y.K. Kim acknowledges the support of the Dupont Young Professor Fellowship.

PY - 2005/8

Y1 - 2005/8

N2 - Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlOx)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.

AB - Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlOx)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.

KW - A. Nano-oxide layer

KW - D. Interlayer diffusion

KW - D. Magnetic tunnel junction

UR - https://www.scopus.com/pages/publications/21644485140

U2 - 10.1016/j.ssc.2005.05.031

DO - 10.1016/j.ssc.2005.05.031

M3 - Article

AN - SCOPUS:21644485140

SN - 0038-1098

VL - 135

SP - 348

EP - 351

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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