Abstract
The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 - 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.
| Original language | English |
|---|---|
| Pages (from-to) | 1081-1084 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 449-452 |
| Issue number | II |
| Publication status | Published - 2004 |
| Event | Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of Duration: 2003 Nov 5 → 2003 Nov 8 |
Keywords
- Hybrid ferromagnetic metal/semiconductor
- Spin injection
- Spin-polarized transport
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering