Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers

D. K. Kim; J. U. Cho; B. S. Chun; K. H. Shin; K. J. Lee; M. Tsunoda; M. Takahashi; Y. K. Kim

doi:10.1063/1.4768931

Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers

D. K. Kim, J. U. Cho, B. S. Chun, K. H. Shin, K. J. Lee, M. Tsunoda, M. Takahashi, Y. K. Kim

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Abstract

We report the transport properties of a dual MgO barrier magnetic tunnel junction (DMTJ) where a FeNiSiB layer was inserted in a CoFeB free layer. Upon post-deposition annealing at 330 °C, the tunneling magnetoresistance (TMR) ratio of the DMTJ with a hybrid CoFeB/FeNiSiB/CoFeB free layer reached 195% which is higher than the TMR ratio of 121 from the DMTJ with the single CoFeB free layer. The bias voltage dependence profile was more symmetric for the hybrid case. Boron depth profiling result suggests that the FeNiSiB layer dragged boron atoms more to it rather than letting them diffuse toward CoFeB/MgO interfaces, resulting in improved MTJ performances.

Original language	English
Article number	232401
Journal	Applied Physics Letters
Volume	101
Issue number	23
DOIs	https://doi.org/10.1063/1.4768931
Publication status	Published - 2012 Dec 3

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (No. 2012-0005657).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4768931

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title = "Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers",

abstract = "We report the transport properties of a dual MgO barrier magnetic tunnel junction (DMTJ) where a FeNiSiB layer was inserted in a CoFeB free layer. Upon post-deposition annealing at 330 °C, the tunneling magnetoresistance (TMR) ratio of the DMTJ with a hybrid CoFeB/FeNiSiB/CoFeB free layer reached 195% which is higher than the TMR ratio of 121 from the DMTJ with the single CoFeB free layer. The bias voltage dependence profile was more symmetric for the hybrid case. Boron depth profiling result suggests that the FeNiSiB layer dragged boron atoms more to it rather than letting them diffuse toward CoFeB/MgO interfaces, resulting in improved MTJ performances.",

author = "Kim, {D. K.} and Cho, {J. U.} and Chun, {B. S.} and Shin, {K. H.} and Lee, {K. J.} and M. Tsunoda and M. Takahashi and Kim, {Y. K.}",

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AU - Kim, D. K.

AU - Cho, J. U.

AU - Chun, B. S.

AU - Shin, K. H.

AU - Lee, K. J.

AU - Tsunoda, M.

AU - Takahashi, M.

AU - Kim, Y. K.

N1 - Funding Information: This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (No. 2012-0005657).

PY - 2012/12/3

Y1 - 2012/12/3

N2 - We report the transport properties of a dual MgO barrier magnetic tunnel junction (DMTJ) where a FeNiSiB layer was inserted in a CoFeB free layer. Upon post-deposition annealing at 330 °C, the tunneling magnetoresistance (TMR) ratio of the DMTJ with a hybrid CoFeB/FeNiSiB/CoFeB free layer reached 195% which is higher than the TMR ratio of 121 from the DMTJ with the single CoFeB free layer. The bias voltage dependence profile was more symmetric for the hybrid case. Boron depth profiling result suggests that the FeNiSiB layer dragged boron atoms more to it rather than letting them diffuse toward CoFeB/MgO interfaces, resulting in improved MTJ performances.

AB - We report the transport properties of a dual MgO barrier magnetic tunnel junction (DMTJ) where a FeNiSiB layer was inserted in a CoFeB free layer. Upon post-deposition annealing at 330 °C, the tunneling magnetoresistance (TMR) ratio of the DMTJ with a hybrid CoFeB/FeNiSiB/CoFeB free layer reached 195% which is higher than the TMR ratio of 121 from the DMTJ with the single CoFeB free layer. The bias voltage dependence profile was more symmetric for the hybrid case. Boron depth profiling result suggests that the FeNiSiB layer dragged boron atoms more to it rather than letting them diffuse toward CoFeB/MgO interfaces, resulting in improved MTJ performances.

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DO - 10.1063/1.4768931

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Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers

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