Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures

Taehee Yoo, Sanghoon Lee, Xinyu Liu, Jacek K. Furdyna, Dong Uk Lee, Eun Kyu Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We discuss tunneling magnetoresistance (TMR) phenomena observed in hybrid magnetic tunnel junctions (MTJs) fabricated from a Fe/GaAlAs/GaMnAs trilayer. The TMR clearly shows abrupt changes of resistance that depends on the relative alignments of magnetization in the two magnetic layers comprising the MTJ. The TMR ratio of the structure strongly depends on the bias voltage, reaching values up to ~45% when the bias voltage is low (~0.2 mV). In addition, the device exhibits intermediate TMR values, which correspond to non-collinear alignments of magnetization in the GaMnAs and the Fe layers. Such alignments are possible due to the presence of two magnetic easy axes both in both magnetic layers originating from their strong cubic magnetic anisotropy. The TMR states realized in such Fe/GaAlAs/GaMnAs MTJs are excellent candidates for use in multi-valued memory storage devices.

Original languageEnglish
Article number17C715
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
Publication statusPublished - 2014 May 7

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Science, ICT and Future Planning (No. 2013K000311), by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2013R1A1A2004505), and by the National Science Foundation Grant No. DMR10-05851.

Publisher Copyright:
© 2014 AIP Publishing LLC

ASJC Scopus subject areas

  • General Physics and Astronomy

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