Magnetotransport properties of GaMnAsInGaAsGaMnAs trilayer structures have been investigated by Hall measurements. The samples in the series are identical except for the InGaAs spacer thickness, which varies from 5 to 50 nm. The Hall measurements revealed the systematic change of magnetic easy axes from in-plane to out-of plane with increasing InGaAs spacer thickness. Such dependence of magnetic easy axes of the trilayer systems was understood in terms of the magnetic anisotropy change with spacer thickness. In the magnetization reversal process, various configurations of magnetization between the two GaMnAs layers were observed both in in-plane and out-of plane samples by the planar and the anomalous Hall effects.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R01-2008-000-10057-0); by the Korea Research Foundation Grant KRF-2004-005-C00068, by the Seoul R&DB Program, and by the National Science Foundations Grant DMR06-03762.
ASJC Scopus subject areas
- Physics and Astronomy(all)