Magnetotransport properties of GaMnAs based trilayer structures with different thicknesses of InGaAs spacer layer

Hakjoon Lee; Sunjae Chung; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.3059601

Magnetotransport properties of GaMnAs based trilayer structures with different thicknesses of InGaAs spacer layer

Hakjoon Lee, Sunjae Chung, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Magnetotransport properties of GaMnAsInGaAsGaMnAs trilayer structures have been investigated by Hall measurements. The samples in the series are identical except for the InGaAs spacer thickness, which varies from 5 to 50 nm. The Hall measurements revealed the systematic change of magnetic easy axes from in-plane to out-of plane with increasing InGaAs spacer thickness. Such dependence of magnetic easy axes of the trilayer systems was understood in terms of the magnetic anisotropy change with spacer thickness. In the magnetization reversal process, various configurations of magnetization between the two GaMnAs layers were observed both in in-plane and out-of plane samples by the planar and the anomalous Hall effects.

Original language	English
Article number	07C505
Journal	Journal of Applied Physics
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.3059601
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R01-2008-000-10057-0); by the Korea Research Foundation Grant KRF-2004-005-C00068, by the Seoul R&DB Program, and by the National Science Foundations Grant DMR06-03762.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3059601

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@article{68f79c8652d34fc88aff6b32e4a4e5b0,

title = "Magnetotransport properties of GaMnAs based trilayer structures with different thicknesses of InGaAs spacer layer",

abstract = "Magnetotransport properties of GaMnAsInGaAsGaMnAs trilayer structures have been investigated by Hall measurements. The samples in the series are identical except for the InGaAs spacer thickness, which varies from 5 to 50 nm. The Hall measurements revealed the systematic change of magnetic easy axes from in-plane to out-of plane with increasing InGaAs spacer thickness. Such dependence of magnetic easy axes of the trilayer systems was understood in terms of the magnetic anisotropy change with spacer thickness. In the magnetization reversal process, various configurations of magnetization between the two GaMnAs layers were observed both in in-plane and out-of plane samples by the planar and the anomalous Hall effects.",

author = "Hakjoon Lee and Sunjae Chung and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R01-2008-000-10057-0); by the Korea Research Foundation Grant KRF-2004-005-C00068, by the Seoul R&DB Program, and by the National Science Foundations Grant DMR06-03762.",

year = "2009",

doi = "10.1063/1.3059601",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Magnetotransport properties of GaMnAs based trilayer structures with different thicknesses of InGaAs spacer layer

AU - Lee, Hakjoon

AU - Chung, Sunjae

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R01-2008-000-10057-0); by the Korea Research Foundation Grant KRF-2004-005-C00068, by the Seoul R&DB Program, and by the National Science Foundations Grant DMR06-03762.

PY - 2009

Y1 - 2009

N2 - Magnetotransport properties of GaMnAsInGaAsGaMnAs trilayer structures have been investigated by Hall measurements. The samples in the series are identical except for the InGaAs spacer thickness, which varies from 5 to 50 nm. The Hall measurements revealed the systematic change of magnetic easy axes from in-plane to out-of plane with increasing InGaAs spacer thickness. Such dependence of magnetic easy axes of the trilayer systems was understood in terms of the magnetic anisotropy change with spacer thickness. In the magnetization reversal process, various configurations of magnetization between the two GaMnAs layers were observed both in in-plane and out-of plane samples by the planar and the anomalous Hall effects.

AB - Magnetotransport properties of GaMnAsInGaAsGaMnAs trilayer structures have been investigated by Hall measurements. The samples in the series are identical except for the InGaAs spacer thickness, which varies from 5 to 50 nm. The Hall measurements revealed the systematic change of magnetic easy axes from in-plane to out-of plane with increasing InGaAs spacer thickness. Such dependence of magnetic easy axes of the trilayer systems was understood in terms of the magnetic anisotropy change with spacer thickness. In the magnetization reversal process, various configurations of magnetization between the two GaMnAs layers were observed both in in-plane and out-of plane samples by the planar and the anomalous Hall effects.

UR - http://www.scopus.com/inward/record.url?scp=65249132515&partnerID=8YFLogxK

U2 - 10.1063/1.3059601

DO - 10.1063/1.3059601

M3 - Article

AN - SCOPUS:65249132515

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 07C505

ER -

Magnetotransport properties of GaMnAs based trilayer structures with different thicknesses of InGaAs spacer layer

Abstract

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