Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness

Si Nyeon Kim; Ku Hoon Chung; Jun Woo Choi; Sang Ho Lim

doi:10.1016/j.jallcom.2020.153727

Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness

Si Nyeon Kim, Ku Hoon Chung, Jun Woo Choi, Sang Ho Lim

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the Néel walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA·Oe is obtained.

Original language	English
Article number	153727
Journal	Journal of Alloys and Compounds
Volume	823
DOIs	https://doi.org/10.1016/j.jallcom.2020.153727
Publication status	Published - 2020 May 15

Bibliographical note

Funding Information:
This work was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea (No 2015M3D1A1070465 ) and the Samsung Electronics’ University R&D Program .

Publisher Copyright:
© 2020 Elsevier B.V.

Keywords

Crystal growth
Domain structure
Magnetic measurements
Magnetic thin films and multilayers
Magnetoresistance

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2020.153727

Cite this

@article{00777b80ccb34dd481f6625b6e1ce131,

title = "Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness",

abstract = "The manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the N{\'e}el walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA·Oe is obtained.",

keywords = "Crystal growth, Domain structure, Magnetic measurements, Magnetic thin films and multilayers, Magnetoresistance",

author = "Kim, {Si Nyeon} and Chung, {Ku Hoon} and Choi, {Jun Woo} and Lim, {Sang Ho}",

note = "Funding Information: This work was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea (No 2015M3D1A1070465 ) and the Samsung Electronics{\textquoteright} University R&D Program . Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = may,

day = "15",

doi = "10.1016/j.jallcom.2020.153727",

language = "English",

volume = "823",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness

AU - Kim, Si Nyeon

AU - Chung, Ku Hoon

AU - Choi, Jun Woo

AU - Lim, Sang Ho

N1 - Funding Information: This work was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea (No 2015M3D1A1070465 ) and the Samsung Electronics’ University R&D Program . Publisher Copyright: © 2020 Elsevier B.V.

PY - 2020/5/15

Y1 - 2020/5/15

N2 - The manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the Néel walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA·Oe is obtained.

AB - The manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the Néel walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA·Oe is obtained.

KW - Crystal growth

KW - Domain structure

KW - Magnetic measurements

KW - Magnetic thin films and multilayers

KW - Magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=85077735392&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2020.153727

DO - 10.1016/j.jallcom.2020.153727

M3 - Article

AN - SCOPUS:85077735392

SN - 0925-8388

VL - 823

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 153727

ER -

Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this