TY - JOUR
T1 - Manipulation of magnetization in GaMnAs films by spin-orbit-induced magnetic fields
AU - Lee, Sangyeop
AU - Yoo, Taehee
AU - Bac, Seul Ki
AU - Choi, Seonghoon
AU - Lee, Hakjoon
AU - Lee, Sanghoon
AU - Liu, X.
AU - Furdyna, J. K.
AU - Dobrowolska, M.
N1 - Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01056614); by Korea University through a grant; and by the National Science Foundation Grant DMR 1400432.
Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - We have investigated the effect of spin-orbit-induced (SOI) magnetic fields on magnetization switching in GaMnAs films. The sign of such SOI fields depends on the direction of the current flowing in the film, thus providing a handle for electrically manipulating magnetization in ferromagnetic GaMnAs films. Specifically, when an applied magnetic field is swept along the current direction, magnetization reversal occurs via rotations in opposite sense (i.e., clockwise (CW) or counterclockwise (CCW)) depending on the sign of the current, thus leading to opposite signs of the planar Hall resistance (PHR) measured on the film. The effect of SOI fields also manifests itself through hysteretic behavior of PHR for two opposite currents as a fixed magnetic field is rotated in the film plane. The width of the resulting hysteresis between two current directions then allows us to estimate the magnitude of the SOI field at current density of 1.0 × 105 A/cm2 as ∼1.2 Oe in our GaMnAs film. Such switching of magnetization between two magnetic easy axes induced by switching the sign of an applied current provides a means of electronically controlling the value of film resistance (in this case of PHR), a process that can be exploited in spintronic devices.
AB - We have investigated the effect of spin-orbit-induced (SOI) magnetic fields on magnetization switching in GaMnAs films. The sign of such SOI fields depends on the direction of the current flowing in the film, thus providing a handle for electrically manipulating magnetization in ferromagnetic GaMnAs films. Specifically, when an applied magnetic field is swept along the current direction, magnetization reversal occurs via rotations in opposite sense (i.e., clockwise (CW) or counterclockwise (CCW)) depending on the sign of the current, thus leading to opposite signs of the planar Hall resistance (PHR) measured on the film. The effect of SOI fields also manifests itself through hysteretic behavior of PHR for two opposite currents as a fixed magnetic field is rotated in the film plane. The width of the resulting hysteresis between two current directions then allows us to estimate the magnitude of the SOI field at current density of 1.0 × 105 A/cm2 as ∼1.2 Oe in our GaMnAs film. Such switching of magnetization between two magnetic easy axes induced by switching the sign of an applied current provides a means of electronically controlling the value of film resistance (in this case of PHR), a process that can be exploited in spintronic devices.
KW - Ferromagnetic semiconductors
KW - Planar Hall resistance
KW - Spin orbit induced field
UR - http://www.scopus.com/inward/record.url?scp=85014623763&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2017.03.004
DO - 10.1016/j.cap.2017.03.004
M3 - Article
AN - SCOPUS:85014623763
SN - 1567-1739
VL - 17
SP - 801
EP - 805
JO - Current Applied Physics
JF - Current Applied Physics
IS - 5
ER -