Mapping of magnetic anisotropy in strained ferromagnetic semiconductor GaMnAs films

Shinhee Kim, Hakjoon Lee, Taehee Yoo, Sangyeop Lee, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


The effect of strain on the magnetic anisotropy of GaMnAs films has been systematically investigated using Hall effect measurements. The magnitude of the strain, which was caused by differences in the lattice constant between the GaMnAs film and buffer layer, was controlled by adjustment of the alloy composition in the GaInAs buffer layer. The in-plane and out-of-plane components of the magnetic anisotropy were obtained from the angular dependence of the planar Hall resistance and the anomalous Hall resistance, respectively. The anisotropy constants obtained allow us to construct a three-dimensional magnetic free energy surface, which provides a clear understanding of the transition behavior of the magnetization between the in-plane and out-of-plane direction in the GaMnAs films.

Original languageEnglish
Article number103911
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 2010 May 15

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0085028); by the Seoul R&DB Program (Grant No. 10543); and by the National Science Foundation under Grant No. DMR06-03762.

ASJC Scopus subject areas

  • General Physics and Astronomy


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