Abstract
Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of -160 μVK-1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications.
Original language | English |
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Pages (from-to) | 441-445 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 290 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2006 May 1 |
Bibliographical note
Funding Information:This research was supported by a grant(code #: 05K1501-02010) from Center for Nanostructured Materials Technology under 21st Century Frontier R&D Programs of the Ministry of Science and Technology, Korea.
Keywords
- A3. Metalorganic chemical vapor deposition
- B1. Bismuth compounds
- B2. Thermoelectric materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry