Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Surface Morphology
100%
GaAs Substrate
100%
Material Characteristics
100%
Bi2Te3 Films
100%
Deposition Temperature
75%
Carrier Concentration
50%
Growth Parameters
50%
Two Dimensional
25%
Device Application
25%
Morphological Properties
25%
Thermoelectric Properties
25%
Growth Form
25%
Precursor Ratio
25%
Hall Mobility
25%
Metal-organic Materials
25%
Organic Sources
25%
Trimethylbismuth
25%
Bismuth Telluride
25%
High Seebeck Coefficient
25%
Intrinsic Region
25%
Surface Electrical Properties
25%
Supperlattice
25%
Step-flow Growth
25%
Thermoelectric Thin Film
25%
Island Coalescence
25%
Material Science
Film
100%
Surface Morphology
100%
Chemical Vapor Deposition
100%
Gallium Arsenide
100%
Carrier Concentration
50%
Thermoelectrics
50%
Thin Films
25%
Metal-Organic Chemical Vapor Deposition
25%
Hall Mobility
25%