Maximum Power CW 2.45-W 1.55-μm InGaAsP Laterally Tapered Laser Diodes

1.55-μm InGaAsP tapered lasers were fabricated using a highly p-doped separate confinement layer and strained compensated multiple quantum wells. A maximum power of CW 2.45 W and a diffraction-limited power of CW 1 W was obtained at room temperature, A reduction of the non-radiative Auger recombination due to a uniform hole distribution in the strain compensated multiple quantum wells (MQWs) was responsible for the high maximum power of the tapered lasers. A high diffraction-limited power of over CW 1 W was achieved by using a broadened waveguide.