Maximum Power CW 2.45-W 1.55-μm InGaAsP Laterally Tapered Laser Diodes

Du Chang Heo, Il Ki Han, Jung Il Lee, Ji Chai Jeong

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


1.55-μm InGaAsP tapered lasers were fabricated using a highly p-doped separate confinement layer and strained compensated multiple quantum wells. A maximum power of CW 2.45 W and a diffraction-limited power of CW 1 W was obtained at room temperature, A reduction of the non-radiative Auger recombination due to a uniform hole distribution in the strain compensated multiple quantum wells (MQWs) was responsible for the high maximum power of the tapered lasers. A high diffraction-limited power of over CW 1 W was achieved by using a broadened waveguide.

Original languageEnglish
Pages (from-to)352-356
Number of pages5
JournalJournal of the Korean Physical Society
Issue number3
Publication statusPublished - 2003 Sept


  • Diffractioin-limited
  • Filamentation
  • InGaAsP/InP
  • Laser diodes
  • Taper laser

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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