Abstract
Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.
Original language | English |
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Title of host publication | 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 110-113 |
Number of pages | 4 |
ISBN (Print) | 0780371291, 9780780371293 |
DOIs | |
Publication status | Published - 2001 |
Externally published | Yes |
Event | 3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States Duration: 2001 Sept 14 → … |
Other
Other | 3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 |
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Country/Territory | United States |
City | Ann Arbor |
Period | 01/9/14 → … |
Keywords
- Electrical resistance measurement
- Geometry
- Germanium silicon alloys
- Length measurement
- Resistance heating
- Silicon germanium
- Solid modeling
- Temperature
- Thermal resistance
- Velocity measurement
ASJC Scopus subject areas
- General Computer Science