Abstract
We report on the measurement of stress in bulk, free-standing GaN templates under external bending using micro-Raman scattering. A 488 nm Ar-ion laser beam was scanned in a cross-sectional geometry across the GaN template held under external stress conditions. Our experiment showed that the top half of the bulk GaN was under ∼73 MPa of tensile stress while the bottom half of the GaN template was under 40 MPa of compressive stress when bent by a press screw. This data is very helpful to understand both the optical and mechanical properties of bulk GaN and for calibrating and optimizing GaN-based pressure sensors.
Original language | English |
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Pages (from-to) | 2393-2396 |
Number of pages | 4 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 203 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2006 Aug |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry