Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors

J. S. Rieh; P. K. Bhattacharya; E. T. Croke

Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors

J. S. Rieh, P. K. Bhattacharya, E. T. Croke

Research output: Contribution to conference › Paper › peer-review

Abstract

The SiGe/Si npn heterostructure bipolar transistor (HBT) is a minority carrier device and its performance is governed by the transport properties of minority carriers. The temperature dependence of the minority electron mobility in the HBT was measured by the magnetoresistance technique. Measurement was made from T = 300 K down to 5 K in an Oxford superconducting cryo-magnet system, and the measured minority electron mobilities exhibited strong temperature dependence. This behavior was compared with that of majority carrier mobilities, which show weak temperature dependence at doping concentrations of the order of 10¹⁹ cm^-3. The mobility value at 300 K obtained by the magnetoresistance technique agrees well with the value derived from the f_T method.

Original language	English
Pages	184-185
Number of pages	2
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: 1999 Jun 28 → 1999 Jun 30

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Other	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
City	Santa Barbara, CA, USA
Period	99/6/28 → 99/6/30

ASJC Scopus subject areas

General Engineering

Cite this

@conference{ed238a6b5d1a49adb4afb9a4542fd581,

title = "Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors",

abstract = "The SiGe/Si npn heterostructure bipolar transistor (HBT) is a minority carrier device and its performance is governed by the transport properties of minority carriers. The temperature dependence of the minority electron mobility in the HBT was measured by the magnetoresistance technique. Measurement was made from T = 300 K down to 5 K in an Oxford superconducting cryo-magnet system, and the measured minority electron mobilities exhibited strong temperature dependence. This behavior was compared with that of majority carrier mobilities, which show weak temperature dependence at doping concentrations of the order of 1019 cm-3. The mobility value at 300 K obtained by the magnetoresistance technique agrees well with the value derived from the fT method.",

author = "Rieh, {J. S.} and Bhattacharya, {P. K.} and Croke, {E. T.}",

year = "1999",

language = "English",

pages = "184--185",

note = "Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) ; Conference date: 28-06-1999 Through 30-06-1999",

}

TY - CONF

T1 - Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors

AU - Rieh, J. S.

AU - Bhattacharya, P. K.

AU - Croke, E. T.

PY - 1999

Y1 - 1999

N2 - The SiGe/Si npn heterostructure bipolar transistor (HBT) is a minority carrier device and its performance is governed by the transport properties of minority carriers. The temperature dependence of the minority electron mobility in the HBT was measured by the magnetoresistance technique. Measurement was made from T = 300 K down to 5 K in an Oxford superconducting cryo-magnet system, and the measured minority electron mobilities exhibited strong temperature dependence. This behavior was compared with that of majority carrier mobilities, which show weak temperature dependence at doping concentrations of the order of 1019 cm-3. The mobility value at 300 K obtained by the magnetoresistance technique agrees well with the value derived from the fT method.

AB - The SiGe/Si npn heterostructure bipolar transistor (HBT) is a minority carrier device and its performance is governed by the transport properties of minority carriers. The temperature dependence of the minority electron mobility in the HBT was measured by the magnetoresistance technique. Measurement was made from T = 300 K down to 5 K in an Oxford superconducting cryo-magnet system, and the measured minority electron mobilities exhibited strong temperature dependence. This behavior was compared with that of majority carrier mobilities, which show weak temperature dependence at doping concentrations of the order of 1019 cm-3. The mobility value at 300 K obtained by the magnetoresistance technique agrees well with the value derived from the fT method.

UR - http://www.scopus.com/inward/record.url?scp=0033365694&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033365694&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033365694

SP - 184

EP - 185

T2 - Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)

Y2 - 28 June 1999 through 30 June 1999

ER -

Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors

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