Abstract
The SiGe/Si npn heterostructure bipolar transistor (HBT) is a minority carrier device and its performance is governed by the transport properties of minority carriers. The temperature dependence of the minority electron mobility in the HBT was measured by the magnetoresistance technique. Measurement was made from T = 300 K down to 5 K in an Oxford superconducting cryo-magnet system, and the measured minority electron mobilities exhibited strong temperature dependence. This behavior was compared with that of majority carrier mobilities, which show weak temperature dependence at doping concentrations of the order of 1019 cm-3. The mobility value at 300 K obtained by the magnetoresistance technique agrees well with the value derived from the fT method.
Original language | English |
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Pages | 184-185 |
Number of pages | 2 |
Publication status | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: 1999 Jun 28 → 1999 Jun 30 |
Other
Other | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) |
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City | Santa Barbara, CA, USA |
Period | 99/6/28 → 99/6/30 |
ASJC Scopus subject areas
- General Engineering