Measurements of current spreading length and design of GaN-based light emitting diodes

Hyunsoo Kim; Jaehee Cho; Jeong Wook Lee; Sukho Yoon; Hyungkun Kim; Cheolsoo Sone; Yongjo Park; Tae Yeon Seong

doi:10.1063/1.2450670

Measurements of current spreading length and design of GaN-based light emitting diodes

Hyunsoo Kim, Jaehee Cho, Jeong Wook Lee, Sukho Yoon, Hyungkun Kim, Cheolsoo Sone, Yongjo Park, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.

Original language	English
Article number	063510
Journal	Applied Physics Letters
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.2450670
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2450670

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abstract = "The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.",

author = "Hyunsoo Kim and Jaehee Cho and Lee, {Jeong Wook} and Sukho Yoon and Hyungkun Kim and Cheolsoo Sone and Yongjo Park and Seong, {Tae Yeon}",

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AU - Kim, Hyunsoo

AU - Cho, Jaehee

AU - Lee, Jeong Wook

AU - Yoon, Sukho

AU - Kim, Hyungkun

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Seong, Tae Yeon

PY - 2007

Y1 - 2007

N2 - The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.

AB - The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.

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JO - Applied Physics Letters

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Measurements of current spreading length and design of GaN-based light emitting diodes

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