Mechanical and electrical properties of Si-SiC fabricated using SiC-C composite powders synthesized by sol-gel process

Sung Il Youn, Gyung Sun Cho, Mi Rae Youm, Dae Soon Lim, Sang Whan Park

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In this study, Si-SiC composites were fabricated using a Si melt infiltration method using β-SiC/C composite powders synthesized by the carbothermal reduction of SiO2-C precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to 6 μm with increasing carbon contents of the SiO2-C precursors. It was found that the Si-SiC composites fabricated in this study consist of β-SiC and residual Si, without any trace of α-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than 2.9 g/cm3. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than 0.018 Ωcm. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si- SiC composites was found to slightly increase from 0.0157 to 0.018 Ωcm.

Original languageEnglish
Pages (from-to)459-465
Number of pages7
JournalJournal of the Korean Ceramic Society
Issue number5
Publication statusPublished - 2014 Sept 30

Bibliographical note

Publisher Copyright:
© 2014, The Korean Ceramic Society. All rights reserved.


  • Bending strength
  • RBSC
  • Si-SiC composite
  • Silicon carbide
  • Specific resistivity

ASJC Scopus subject areas

  • Ceramics and Composites


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