Mechanical strain-induced defect states in amorphous silicon channel layers of thin-film transistors

Minsuk Kim; Hyungon Oh; Sukhyung Park; Kyoungah Cho; Sangsig Kim

doi:10.1016/j.tsf.2017.01.049

Mechanical strain-induced defect states in amorphous silicon channel layers of thin-film transistors

Minsuk Kim, Hyungon Oh, Sukhyung Park, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, we examined mechanical strain-induced defect states in hydrogenated amorphous silicon (a-Si:H) channel layers of thin-film transistors (TFTs) bent with a curvature radius of 18 mm. When strain is applied to the TFTs, our devices feature strain-induced variations in threshold voltage (~ 1.47 V), subthreshold swing (~ 0.36 V/dec), and field-effect mobility (~ 0.031 cm² V^{− 1} s^{− 1}). The electrical characteristics of a-Si:H TFTs on bendable substrates under mechanical strain are explained by the variation in the density of states (DOS) of defects in the channel layers. Our simulation work on the DOS in the a-Si:H channel layers under mechanical strain reveals that the mechanical strain causes not only the deformation of the density of mid-gap defect states but also an increase in the band-tail states within the band gap.

Original language	English
Pages (from-to)	43-46
Number of pages	4
Journal	Thin Solid Films
Volume	641
DOIs	https://doi.org/10.1016/j.tsf.2017.01.049
Publication status	Published - 2017 Nov 1

Bibliographical note

Funding Information:
This work was partly supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean government (MSIP) NRF-2013R1A2A1A03070750 , NRF-2015R1A2A1A15055437 , NRF-2015R1A5A7037674 , NRF-2015R1D1A1A01057641 ), the Brain Korea 21 Plus Project in 2016, and a grant from Samsung Display Co., Ltd.

Publisher Copyright:
© 2017 Elsevier B.V.

Keywords

Bendability
Density of states
Flexible
Mechanical strain
Thin-film transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2017.01.049

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abstract = "In this study, we examined mechanical strain-induced defect states in hydrogenated amorphous silicon (a-Si:H) channel layers of thin-film transistors (TFTs) bent with a curvature radius of 18 mm. When strain is applied to the TFTs, our devices feature strain-induced variations in threshold voltage (~ 1.47 V), subthreshold swing (~ 0.36 V/dec), and field-effect mobility (~ 0.031 cm2 V− 1 s− 1). The electrical characteristics of a-Si:H TFTs on bendable substrates under mechanical strain are explained by the variation in the density of states (DOS) of defects in the channel layers. Our simulation work on the DOS in the a-Si:H channel layers under mechanical strain reveals that the mechanical strain causes not only the deformation of the density of mid-gap defect states but also an increase in the band-tail states within the band gap.",

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author = "Minsuk Kim and Hyungon Oh and Sukhyung Park and Kyoungah Cho and Sangsig Kim",

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AU - Kim, Minsuk

AU - Oh, Hyungon

AU - Park, Sukhyung

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: This work was partly supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean government (MSIP) NRF-2013R1A2A1A03070750 , NRF-2015R1A2A1A15055437 , NRF-2015R1A5A7037674 , NRF-2015R1D1A1A01057641 ), the Brain Korea 21 Plus Project in 2016, and a grant from Samsung Display Co., Ltd. Publisher Copyright: © 2017 Elsevier B.V.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - In this study, we examined mechanical strain-induced defect states in hydrogenated amorphous silicon (a-Si:H) channel layers of thin-film transistors (TFTs) bent with a curvature radius of 18 mm. When strain is applied to the TFTs, our devices feature strain-induced variations in threshold voltage (~ 1.47 V), subthreshold swing (~ 0.36 V/dec), and field-effect mobility (~ 0.031 cm2 V− 1 s− 1). The electrical characteristics of a-Si:H TFTs on bendable substrates under mechanical strain are explained by the variation in the density of states (DOS) of defects in the channel layers. Our simulation work on the DOS in the a-Si:H channel layers under mechanical strain reveals that the mechanical strain causes not only the deformation of the density of mid-gap defect states but also an increase in the band-tail states within the band gap.

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Mechanical strain-induced defect states in amorphous silicon channel layers of thin-film transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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