Mechanism for CuPt-type ordering in mixed III-V epitaxial layers

B. A. Philips, A. G. Norman, T. Y. Seong, S. Mahajan, G. R. Booker, M. Skowronski, J. P. Harbison, V. G. Keramidas

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100 Citations (Scopus)


A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III-V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.

Original languageEnglish
Pages (from-to)249-263
Number of pages15
JournalJournal of Crystal Growth
Issue number3-4
Publication statusPublished - 1994 Jul
Externally publishedYes

Bibliographical note

Funding Information:
The work at Carnegie Mellon was carried out under the auspices of the Office of Naval Research and the Department of Energy and B.A.P., S.M., and M.S. gratefully acknowledge the awards of the grants N00014-92-J-1124 and DE-FGO2-87ER45329. The work at the University of Oxford and Imperial College was funded by the Science and Engineering Research Council (SERC) and A.G.N. gratefully acknowledges the award of an SERC Visiting Fellowship and T.V.S. the British Council for financial support.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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