Mechanism for CuPt-type ordering in mixed III-V epitaxial layers

B. A. Philips; A. G. Norman; T. Y. Seong; S. Mahajan; G. R. Booker; M. Skowronski; J. P. Harbison; V. G. Keramidas

doi:10.1016/0022-0248(94)90297-6

Mechanism for CuPt-type ordering in mixed III-V epitaxial layers

B. A. Philips, A. G. Norman, T. Y. Seong, S. Mahajan, G. R. Booker, M. Skowronski, J. P. Harbison, V. G. Keramidas

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Abstract

A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III-V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.

Original language	English
Pages (from-to)	249-263
Number of pages	15
Journal	Journal of Crystal Growth
Volume	140
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-0248(94)90297-6
Publication status	Published - 1994 Jul
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(94)90297-6

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@article{bd69b6a9f8b14eaa9cd75f7381d36b4e,

title = "Mechanism for CuPt-type ordering in mixed III-V epitaxial layers",

abstract = "A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III-V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.",

author = "Philips, {B. A.} and Norman, {A. G.} and Seong, {T. Y.} and S. Mahajan and Booker, {G. R.} and M. Skowronski and Harbison, {J. P.} and Keramidas, {V. G.}",

note = "Funding Information: The work at Carnegie Mellon was carried out under the auspices of the Office of Naval Research and the Department of Energy and B.A.P., S.M., and M.S. gratefully acknowledge the awards of the grants N00014-92-J-1124 and DE-FGO2-87ER45329. The work at the University of Oxford and Imperial College was funded by the Science and Engineering Research Council (SERC) and A.G.N. gratefully acknowledges the award of an SERC Visiting Fellowship and T.V.S. the British Council for financial support.",

year = "1994",

month = jul,

doi = "10.1016/0022-0248(94)90297-6",

language = "English",

volume = "140",

pages = "249--263",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Mechanism for CuPt-type ordering in mixed III-V epitaxial layers

AU - Philips, B. A.

AU - Norman, A. G.

AU - Seong, T. Y.

AU - Mahajan, S.

AU - Booker, G. R.

AU - Skowronski, M.

AU - Harbison, J. P.

AU - Keramidas, V. G.

N1 - Funding Information: The work at Carnegie Mellon was carried out under the auspices of the Office of Naval Research and the Department of Energy and B.A.P., S.M., and M.S. gratefully acknowledge the awards of the grants N00014-92-J-1124 and DE-FGO2-87ER45329. The work at the University of Oxford and Imperial College was funded by the Science and Engineering Research Council (SERC) and A.G.N. gratefully acknowledges the award of an SERC Visiting Fellowship and T.V.S. the British Council for financial support.

PY - 1994/7

Y1 - 1994/7

N2 - A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III-V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.

AB - A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III-V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.

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U2 - 10.1016/0022-0248(94)90297-6

DO - 10.1016/0022-0248(94)90297-6

M3 - Article

AN - SCOPUS:0028465884

SN - 0022-0248

VL - 140

SP - 249

EP - 263

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Mechanism for CuPt-type ordering in mixed III-V epitaxial layers

Abstract

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