Abstract
A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III-V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.
Original language | English |
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Pages (from-to) | 249-263 |
Number of pages | 15 |
Journal | Journal of Crystal Growth |
Volume | 140 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 1994 Jul |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry