Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer

Han Ki Kim; Tae Yeon Seong; Koung Kook Kim; Seoug Ju Park; Young Soo Yoon; Ilesanmi Adesida

doi:10.1143/JJAP.43.976

Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer

Han Ki Kim, Tae Yeon Seong, Koung Kook Kim, Seoug Ju Park, Young Soo Yoon, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

The mechanism of Al ohmic contacts to n-type zinc oxide (ZnO:Al) epitaxial layer was investigated. The formation of an Al-ZnO interfacial phase at room temperature was responsible for the low specific resistivity (8 ± 0.3 × 10^-4 Ωcm²). The results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) depth profiles, and glancing angle X-ray diffraction (GXRD) indicate that an interfacial reaction between Al and ZnO results in an increased doping concentration in the region of the ZnO surface resulting in a low specific contact resistivity without the need for a thermal annealing process.

Original language	English
Pages (from-to)	976-979
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	3
DOIs	https://doi.org/10.1143/JJAP.43.976
Publication status	Published - 2004 Mar
Externally published	Yes

Keywords

Auger electron spectroscopy
Interfacial reaction
Ohmic contact
Specific contact resistivity
X-ray photoelectron spectroscopy
ZnO

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.43.976

Cite this

@article{d7b28a1ad6334ea7b4d04999d52a15e9,

title = "Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer",

abstract = "The mechanism of Al ohmic contacts to n-type zinc oxide (ZnO:Al) epitaxial layer was investigated. The formation of an Al-ZnO interfacial phase at room temperature was responsible for the low specific resistivity (8 ± 0.3 × 10-4 Ωcm2). The results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) depth profiles, and glancing angle X-ray diffraction (GXRD) indicate that an interfacial reaction between Al and ZnO results in an increased doping concentration in the region of the ZnO surface resulting in a low specific contact resistivity without the need for a thermal annealing process.",

keywords = "Auger electron spectroscopy, Interfacial reaction, Ohmic contact, Specific contact resistivity, X-ray photoelectron spectroscopy, ZnO",

author = "Kim, {Han Ki} and Seong, {Tae Yeon} and Kim, {Koung Kook} and Park, {Seoug Ju} and Yoon, {Young Soo} and Ilesanmi Adesida",

year = "2004",

month = mar,

doi = "10.1143/JJAP.43.976",

language = "English",

volume = "43",

pages = "976--979",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3",

}

TY - JOUR

T1 - Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer

AU - Kim, Han Ki

AU - Seong, Tae Yeon

AU - Kim, Koung Kook

AU - Park, Seoug Ju

AU - Yoon, Young Soo

AU - Adesida, Ilesanmi

PY - 2004/3

Y1 - 2004/3

N2 - The mechanism of Al ohmic contacts to n-type zinc oxide (ZnO:Al) epitaxial layer was investigated. The formation of an Al-ZnO interfacial phase at room temperature was responsible for the low specific resistivity (8 ± 0.3 × 10-4 Ωcm2). The results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) depth profiles, and glancing angle X-ray diffraction (GXRD) indicate that an interfacial reaction between Al and ZnO results in an increased doping concentration in the region of the ZnO surface resulting in a low specific contact resistivity without the need for a thermal annealing process.

AB - The mechanism of Al ohmic contacts to n-type zinc oxide (ZnO:Al) epitaxial layer was investigated. The formation of an Al-ZnO interfacial phase at room temperature was responsible for the low specific resistivity (8 ± 0.3 × 10-4 Ωcm2). The results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) depth profiles, and glancing angle X-ray diffraction (GXRD) indicate that an interfacial reaction between Al and ZnO results in an increased doping concentration in the region of the ZnO surface resulting in a low specific contact resistivity without the need for a thermal annealing process.

KW - Auger electron spectroscopy

KW - Interfacial reaction

KW - Ohmic contact

KW - Specific contact resistivity

KW - X-ray photoelectron spectroscopy

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=2442514528&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.976

DO - 10.1143/JJAP.43.976

M3 - Article

AN - SCOPUS:2442514528

SN - 0021-4922

VL - 43

SP - 976

EP - 979

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 3

ER -

Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this