Memory characteristics of doubly stacked nano-floating gate memory devices with channels of single ZnO nanowires

Sungsu Kim, Kyoungah Cho, Kiyeol Kwak, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    We present in this paper the memory characteristics of doubly stacked nonvolatile nano-floating gate memory (NFGM) devices with channels of single ZnO nanowires. In our doubly stacked NFGM devices, first- and second-stage floating gate layers composed of Al nanoparticles (NPs) are separated with a 3-nm-thick interlayer of Al2O3. The average size of Al NPs created by sputtering is about 7 nm, and the Al NPs are isolated from each other laterally in the same layer as well as vertically in the double layers. When the voltage is swept from 10 to -10 V, the flat-band voltage shifts are about 0.8 and 2.5 V for the singly and doubly stacked MOS capacitors, respectively. The comparison of metal-oxide-semiconductor capacitors embedded with singly and doubly stacked nanoparticle layers reveals that the retention characteristics of the doubly stacked NFGM device are superior to those of a singly stacked NFGM device. Furthermore, the memory characteristics of the doubly stacked NFGM device remain even after 105 programming and erasing cycles.

    Original languageEnglish
    Pages (from-to)6196-6198
    Number of pages3
    JournalJournal of Nanoscience and Nanotechnology
    Volume13
    Issue number9
    DOIs
    Publication statusPublished - 2013 Sept

    Keywords

    • Al nanoparticle
    • Doubly stacked memory
    • Floating gate memory
    • ZnO nanowire

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • Biomedical Engineering
    • General Materials Science
    • Condensed Matter Physics

    Fingerprint

    Dive into the research topics of 'Memory characteristics of doubly stacked nano-floating gate memory devices with channels of single ZnO nanowires'. Together they form a unique fingerprint.

    Cite this