Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes

Sukhyung Park; Kyoungah Cho; Sangsig Kim

doi:10.1088/0268-1242/30/5/055019

Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes

Sukhyung Park, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al<inf>2</inf>O<inf>3</inf>/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.

Original language	English
Article number	055019
Journal	Semiconductor Science and Technology
Volume	30
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/30/5/055019
Publication status	Published - 2015 May 1

Keywords

metallic filament
nanowire
ReRAM

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry
Condensed Matter Physics

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10.1088/0268-1242/30/5/055019

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title = "Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes",

abstract = "In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al2O3/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.",

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AU - Cho, Kyoungah

AU - Kim, Sangsig

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N2 - In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al2O3/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.

AB - In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al2O3/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.

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Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes

Abstract

Keywords

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