Memory characteristics of MIS capacitors with parylene gate material

Byoungjun Park, Ki Ju Im, Kyoungah Cho, Sangsig Kim

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Memory characteristics of gold nanoparticles-embedded metal-insulator- semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.

    Original languageEnglish
    Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
    Pages422-423
    Number of pages2
    DOIs
    Publication statusPublished - 2006
    Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
    Duration: 2006 Oct 222006 Oct 25

    Publication series

    Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
    Volume1

    Other

    Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
    Country/TerritoryKorea, Republic of
    CityGyeongju
    Period06/10/2206/10/25

    Keywords

    • Capacitance
    • Gold
    • Memory
    • Nanoparticle
    • Parylene

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • General Materials Science

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