@inproceedings{edb686ab106f4f98aa54a7b81108868f,
title = "Memory characteristics of MIS capacitors with parylene gate material",
abstract = "Memory characteristics of gold nanoparticles-embedded metal-insulator- semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.",
keywords = "Capacitance, Gold, Memory, Nanoparticle, Parylene",
author = "Byoungjun Park and Im, {Ki Ju} and Kyoungah Cho and Sangsig Kim",
year = "2006",
doi = "10.1109/NMDC.2006.4388797",
language = "English",
isbn = "1424405408",
series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
pages = "422--423",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",
}