Memory characteristics of MIS capacitors with parylene gate material

Byoungjun Park; Ki Ju Im; Kyoungah Cho; Sangsig Kim

doi:10.1109/NMDC.2006.4388797

Memory characteristics of MIS capacitors with parylene gate material

Byoungjun Park, Ki Ju Im, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Memory characteristics of gold nanoparticles-embedded metal-insulator- semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	422-423
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388797
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Capacitance
Gold
Memory
Nanoparticle
Parylene

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Science(all)

Access to Document

10.1109/NMDC.2006.4388797

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Memory characteristics of MIS capacitors with parylene gate material. / Park, Byoungjun; Im, Ki Ju; Cho, Kyoungah et al.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 422-423 4388797 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, B, Im, KJ, Cho, K & Kim, S 2006, Memory characteristics of MIS capacitors with parylene gate material. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388797, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 422-423, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388797

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title = "Memory characteristics of MIS capacitors with parylene gate material",

abstract = "Memory characteristics of gold nanoparticles-embedded metal-insulator- semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.",

keywords = "Capacitance, Gold, Memory, Nanoparticle, Parylene",

author = "Byoungjun Park and Im, {Ki Ju} and Kyoungah Cho and Sangsig Kim",

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AU - Park, Byoungjun

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N2 - Memory characteristics of gold nanoparticles-embedded metal-insulator- semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.

AB - Memory characteristics of gold nanoparticles-embedded metal-insulator- semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.

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KW - Gold

KW - Memory

KW - Nanoparticle

KW - Parylene

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BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

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Y2 - 22 October 2006 through 25 October 2006

ER -

Memory characteristics of MIS capacitors with parylene gate material

Abstract

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Keywords

ASJC Scopus subject areas

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