Ge nanocrystals (NCs) embedded in Al2O3 gate oxide layers used as the floating gate layers were prepared by the thermal annealing of Ge ions implanted in the gate oxide layers. Capacitance versus voltage (C - V) curves of the Ge NC-embedded metal-oxide-semiconductor (MOS) capacitors were characterized in this work. The C - V curves of the NC-embedded MOS capacitor show counterclockwise hysteresis loops at various sweep voltages, which indicates the presence of charge storage in the Ge NCs caused by the Fowler-Nordheim tunneling of electrons between the p-type Si substrate and the Ge NCs. In addition, capacitance versus time measurements were made for the Ge NC-embedded MOS capacitor to investigate its retention characteristics.
Bibliographical noteFunding Information:
This work was supported by the National Research Program for 0.1 Terabit Non-Volatile Memory Development (10022965-2006-13), the Center for Integrated Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (M10500000045-06J0000-04510).
- A. Nanostructures
- A. Semiconductors
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry