Memory characteristics of platinum nanoparticle-embedded MOS capacitors

Byoungjun Park, Kyoungah Cho, Yong Seo Koo, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The capacitance characteristics of platinum nanoparticle (NP)-embedded metal-oxide-semiconductor (MOS) capacitors with gate Al2O3 layers are studied in this work. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.

Original languageEnglish
Pages (from-to)1334-1337
Number of pages4
JournalCurrent Applied Physics
Issue number6
Publication statusPublished - 2009 Nov

Bibliographical note

Funding Information:
This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601) and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2008)). This work was also supported by the Nano R&D Program (M10703000980-07M0300-98010).


  • Memory
  • Nanoparticle
  • Platinum

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


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