Memory characteristics of silicon nanowire transistors generated by weak impact ionization

Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n+-p-n+ silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an on/off current ratio of ~105 and steep subthreshold swing (~5 mV/dec) but also reliable SRAM characteristics. The SRAM characteristics originate from the positive feedback loops in the SiNW FETs generated by weak impact ionization. This paper describes in detail the operating mechanism of our device and demonstrates the potential of bendable SiNW FETs for future SRAM applications.

Original languageEnglish
Article number12436
JournalScientific reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

Bibliographical note

Funding Information:
This work was supported in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (Nos. NRF-2015R1A2A1A15055437 and NRF-2016R1E1A1A02920171 and), by Global Ph.D. Fellowship Program through the NRF funded by the Ministry of Education (NRF-2014H1A2A1021475), by the Brain Korea 21 Plus Project in 2017, by Samsung Electronics, and by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program (10067791, “Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence”).

Publisher Copyright:
© 2017 The Author(s).

ASJC Scopus subject areas

  • General

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