Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles

Donghyuk Yeom; Jeongmin Kang; Changjoon Yoon; Byoungjun Park; Kihyun Keem; Dong Young Jeong; Mihyun Kim; Eui Kwan Koh; Sangsig Kim

doi:10.1109/IMNC.2007.4456135

Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles

Donghyuk Yeom, Jeongmin Kang, Changjoon Yoon, Byoungjun Park, Kihyun Keem, Dong Young Jeong, Mihyun Kim, Eui Kwan Koh, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have fabricated top-gate single ZnO nanowire-based FETs embedded with Au nanoparticles as a floating gate and characterized their memory effects. Our experimental results demonstrate that the fabricated devices in this study are one of promising devices for the application in the nonvolatile memory devices of next generation.

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages	124-125
Number of pages	2
DOIs	https://doi.org/10.1109/IMNC.2007.4456135
Publication status	Published - 2007
Event	s20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan Duration: 2007 Nov 5 → 2007 Nov 8

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Other

Other	s20th International Microprocesses and Nanotechnology Conference, MNC 2007
Country/Territory	Japan
City	Kyoto
Period	07/11/5 → 07/11/8

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2007.4456135

Cite this

Yeom, D., Kang, J., Yoon, C., Park, B., Keem, K., Jeong, D. Y., Kim, M., Koh, E. K., & Kim, S. (2007). Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC (pp. 124-125). Article 4456135 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). https://doi.org/10.1109/IMNC.2007.4456135

Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles. / Yeom, Donghyuk; Kang, Jeongmin; Yoon, Changjoon et al.
Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 124-125 4456135 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yeom, D, Kang, J, Yoon, C, Park, B, Keem, K, Jeong, DY, Kim, M, Koh, EK & Kim, S 2007, Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles. in Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC., 4456135, Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, pp. 124-125, s20th International Microprocesses and Nanotechnology Conference, MNC 2007, Kyoto, Japan, 07/11/5. https://doi.org/10.1109/IMNC.2007.4456135

Yeom D, Kang J, Yoon C, Park B, Keem K, Jeong DY et al. Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 124-125. 4456135. (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). doi: 10.1109/IMNC.2007.4456135

Yeom, Donghyuk ; Kang, Jeongmin ; Yoon, Changjoon et al. / Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles. Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. pp. 124-125 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

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abstract = "We have fabricated top-gate single ZnO nanowire-based FETs embedded with Au nanoparticles as a floating gate and characterized their memory effects. Our experimental results demonstrate that the fabricated devices in this study are one of promising devices for the application in the nonvolatile memory devices of next generation.",

author = "Donghyuk Yeom and Jeongmin Kang and Changjoon Yoon and Byoungjun Park and Kihyun Keem and Jeong, {Dong Young} and Mihyun Kim and Koh, {Eui Kwan} and Sangsig Kim",

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Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles

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