Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

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317 Citations (Scopus)

Abstract

The memristor, a composite word of memory and resistor, has become one of the most important electronic components for brain-inspired neuromorphic computing in recent years. This device has the ability to control resistance with multiple states by memorizing the history of previous electrical inputs, enabling it to mimic a biological synapse in the neural network of the human brain. Among many candidates for memristive materials, including metal oxides, organic materials, and low-dimensional nanomaterials, 2D layered materials have been widely investigated owing to their outstanding physical properties and electrical tunability, low-power-switching capability, and hetero-integration compatibility. Hence, a large number of experimental demonstrations on 2D material-based memristors have been reported showing their unique memristive characteristics and novel synaptic functionalities, distinct from traditional bulk-material-based systems. Herein, an overview of the latest advances in the structures, mechanisms, and memristive characteristics of 2D material-based memristors is presented. Additionally, novel strategies to modulate and enhance the synaptic functionalities of 2D-memristor-based artificial synapses are summarized. Finally, as a foreseeing perspective, the potentials and challenges of these emerging materials for future neuromorphic electronics are also discussed.

Original languageEnglish
Article number2002092
JournalAdvanced Materials
Volume32
Issue number51
DOIs
Publication statusPublished - 2020 Dec 22

Bibliographical note

Funding Information:
W.H. and D.L. contributed equally to this work. This work was supported by the KU-KIST school project, the Korea University Future Research Grant, and the National Research Foundation (NRF) of Korea (NRF-2020R1A2C2009389 and 2017R1A5A101486214 (SRC Program: vdWMRC Center)). D.L. acknowledges support from the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1I1A1A01071872).

Funding Information:
W.H. and D.L. contributed equally to this work. This work was supported by the KU‐KIST school project, the Korea University Future Research Grant, and the National Research Foundation (NRF) of Korea (NRF‐2020R1A2C2009389 and 2017R1A5A101486214 (SRC Program: vdWMRC Center)). D.L. acknowledges support from the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1I1A1A01071872).

Publisher Copyright:
© 2020 Wiley-VCH GmbH

Keywords

  • 2D materials
  • artificial synapses
  • memristors
  • neuromorphic electronics
  • transition metal dichalcogenides

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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