Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c

Jun Young Choi; Byeong Hyoen Lee; Sang Sig Kim; Sang Yeol Lee

doi:10.1166/jnn.2017.14053

Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c

Jun Young Choi, Byeong Hyoen Lee, Sang Sig Kim, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 °C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (_FE) showed 21.4 cm₂/V s, and V_th shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.

Original language	English
Pages (from-to)	3397-3400
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2017.14053
Publication status	Published - 2017

Keywords

Metal Capping
Oxide Semiconductor
SiInZnO
Thin Film Transistors

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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10.1166/jnn.2017.14053

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title = "Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c",

abstract = "We fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 °C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (FE) showed 21.4 cm2/V s, and Vth shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.",

keywords = "Metal Capping, Oxide Semiconductor, SiInZnO, Thin Film Transistors",

author = "Choi, {Jun Young} and Lee, {Byeong Hyoen} and Kim, {Sang Sig} and Lee, {Sang Yeol}",

note = "Funding Information: National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A2A2A03069155) Publisher Copyright: {\textcopyright} Copyright 2017 American Scientific Publishers.",

year = "2017",

doi = "10.1166/jnn.2017.14053",

language = "English",

volume = "17",

pages = "3397--3400",

journal = "Journal of Nanoscience and Nanotechnology",

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publisher = "American Scientific Publishers",

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T1 - Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c

AU - Choi, Jun Young

AU - Lee, Byeong Hyoen

AU - Kim, Sang Sig

AU - Lee, Sang Yeol

N1 - Funding Information: National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A2A2A03069155) Publisher Copyright: © Copyright 2017 American Scientific Publishers.

PY - 2017

Y1 - 2017

N2 - We fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 °C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (FE) showed 21.4 cm2/V s, and Vth shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.

AB - We fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 °C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (FE) showed 21.4 cm2/V s, and Vth shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.

KW - Metal Capping

KW - Oxide Semiconductor

KW - SiInZnO

KW - Thin Film Transistors

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U2 - 10.1166/jnn.2017.14053

DO - 10.1166/jnn.2017.14053

M3 - Article

AN - SCOPUS:85015408903

SN - 1533-4880

VL - 17

SP - 3397

EP - 3400

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 5

ER -

Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c

Abstract

Keywords

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