Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c

Keyphrases

• High Performance 100%
• Thin-film Transistors 100%
• Indium Zinc Oxide 100%
• Oxide Semiconductor 100%
• Metal Capping 100%
• Field-effect Mobility 50%
• Performance Enhancement 50%
• Oxide Thin-film Transistors 50%
• Zinc Oxide Thin Films 50%
• Low Temperature Process 50%
• Water Vapor 50%
• Amorphous Silicon 50%
• Low Annealing Temperature 50%
• Vth Shift 50%
• RF Sputtering 50%
• Ambient Effects 50%
• Metal Capping Layer 50%

Material Science

• Zinc Oxide 100%
• Silicon 100%
• Oxide Semiconductor 100%
• Thin-Film Transistor 100%
• Indium 100%
• Annealing 33%
• Water Vapor 33%
• Amorphous Silicon 33%

Chemical Engineering

• Indium 100%
• Oxide Semiconductors 100%
• Film 100%
• Zinc Oxide 100%