Metal-insulator-metal capacitors using Ba2Ti9O20 dielectric thin film

Jong Bong Lim; Young Hun Jeong; Sahn Nahm; Jong Hoo Paik; Ho Jung Sun; Hwack Joo Lee

doi:10.1016/j.jeurceramsoc.2006.11.042

Metal-insulator-metal capacitors using Ba₂Ti₉O₂₀ dielectric thin film

Jong Bong Lim, Young Hun Jeong, Sahn Nahm, Jong Hoo Paik, Ho Jung Sun, Hwack Joo Lee

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The dielectric properties of Ba₂Ti₉O₂₀ film were investigated to evaluate its potential use in metal-insulator-metal (MIM) capacitors. A homogeneous crystalline Ba₂Ti₉O₂₀ phase without any second phase developed for the film grown at 700 °C and rapid thermal annealed at 900 °C for 3 min. The 200 nm-thick Ba₂Ti₉O₂₀ film showed a capacitance density of 2.0 fF/μm² with a low dissipation factor of 0.016 at 100 kHz. The capacitance density of the film was low, but it could be increased by decreasing the thickness of the film. The leakage current density was approximately 0.094 nA/cm² at 1 V. A small linear voltage coefficient of capacitance of -690 ppm/V was obtained, together with a quadratic one of -67.41 ppm/V² and a small temperature coefficient of capacitance of -168.87 ppm/°C at 100 kHz. All these results show that the Ba₂Ti₉O₂₀ film is a good candidate material for MIM capacitors.

Original language	English
Pages (from-to)	2871-2874
Number of pages	4
Journal	Journal of the European Ceramic Society
Volume	27
Issue number	8-9 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2006.11.042
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the Ministry of Commerce, Industry and Energy through the Standardization project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

BaTiO thin film
Capacitors
Dielectric properties
Electrical properties

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/j.jeurceramsoc.2006.11.042

Cite this

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title = "Metal-insulator-metal capacitors using Ba2Ti9O20 dielectric thin film",

abstract = "The dielectric properties of Ba2Ti9O20 film were investigated to evaluate its potential use in metal-insulator-metal (MIM) capacitors. A homogeneous crystalline Ba2Ti9O20 phase without any second phase developed for the film grown at 700 °C and rapid thermal annealed at 900 °C for 3 min. The 200 nm-thick Ba2Ti9O20 film showed a capacitance density of 2.0 fF/μm2 with a low dissipation factor of 0.016 at 100 kHz. The capacitance density of the film was low, but it could be increased by decreasing the thickness of the film. The leakage current density was approximately 0.094 nA/cm2 at 1 V. A small linear voltage coefficient of capacitance of -690 ppm/V was obtained, together with a quadratic one of -67.41 ppm/V2 and a small temperature coefficient of capacitance of -168.87 ppm/°C at 100 kHz. All these results show that the Ba2Ti9O20 film is a good candidate material for MIM capacitors.",

keywords = "BaTiO thin film, Capacitors, Dielectric properties, Electrical properties",

author = "Lim, {Jong Bong} and Jeong, {Young Hun} and Sahn Nahm and Paik, {Jong Hoo} and Sun, {Ho Jung} and Lee, {Hwack Joo}",

note = "Funding Information: This work was supported by the Ministry of Commerce, Industry and Energy through the Standardization project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

doi = "10.1016/j.jeurceramsoc.2006.11.042",

language = "English",

volume = "27",

pages = "2871--2874",

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AU - Lim, Jong Bong

AU - Jeong, Young Hun

AU - Nahm, Sahn

AU - Paik, Jong Hoo

AU - Sun, Ho Jung

AU - Lee, Hwack Joo

N1 - Funding Information: This work was supported by the Ministry of Commerce, Industry and Energy through the Standardization project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - The dielectric properties of Ba2Ti9O20 film were investigated to evaluate its potential use in metal-insulator-metal (MIM) capacitors. A homogeneous crystalline Ba2Ti9O20 phase without any second phase developed for the film grown at 700 °C and rapid thermal annealed at 900 °C for 3 min. The 200 nm-thick Ba2Ti9O20 film showed a capacitance density of 2.0 fF/μm2 with a low dissipation factor of 0.016 at 100 kHz. The capacitance density of the film was low, but it could be increased by decreasing the thickness of the film. The leakage current density was approximately 0.094 nA/cm2 at 1 V. A small linear voltage coefficient of capacitance of -690 ppm/V was obtained, together with a quadratic one of -67.41 ppm/V2 and a small temperature coefficient of capacitance of -168.87 ppm/°C at 100 kHz. All these results show that the Ba2Ti9O20 film is a good candidate material for MIM capacitors.

AB - The dielectric properties of Ba2Ti9O20 film were investigated to evaluate its potential use in metal-insulator-metal (MIM) capacitors. A homogeneous crystalline Ba2Ti9O20 phase without any second phase developed for the film grown at 700 °C and rapid thermal annealed at 900 °C for 3 min. The 200 nm-thick Ba2Ti9O20 film showed a capacitance density of 2.0 fF/μm2 with a low dissipation factor of 0.016 at 100 kHz. The capacitance density of the film was low, but it could be increased by decreasing the thickness of the film. The leakage current density was approximately 0.094 nA/cm2 at 1 V. A small linear voltage coefficient of capacitance of -690 ppm/V was obtained, together with a quadratic one of -67.41 ppm/V2 and a small temperature coefficient of capacitance of -168.87 ppm/°C at 100 kHz. All these results show that the Ba2Ti9O20 film is a good candidate material for MIM capacitors.

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