Metal-insulator-metal capacitors using Ba2Ti9O20 dielectric thin film

Jong Bong Lim, Young Hun Jeong, Sahn Nahm, Jong Hoo Paik, Ho Jung Sun, Hwack Joo Lee

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The dielectric properties of Ba2Ti9O20 film were investigated to evaluate its potential use in metal-insulator-metal (MIM) capacitors. A homogeneous crystalline Ba2Ti9O20 phase without any second phase developed for the film grown at 700 °C and rapid thermal annealed at 900 °C for 3 min. The 200 nm-thick Ba2Ti9O20 film showed a capacitance density of 2.0 fF/μm2 with a low dissipation factor of 0.016 at 100 kHz. The capacitance density of the film was low, but it could be increased by decreasing the thickness of the film. The leakage current density was approximately 0.094 nA/cm2 at 1 V. A small linear voltage coefficient of capacitance of -690 ppm/V was obtained, together with a quadratic one of -67.41 ppm/V2 and a small temperature coefficient of capacitance of -168.87 ppm/°C at 100 kHz. All these results show that the Ba2Ti9O20 film is a good candidate material for MIM capacitors.

Original languageEnglish
Pages (from-to)2871-2874
Number of pages4
JournalJournal of the European Ceramic Society
Issue number8-9 SPEC. ISS.
Publication statusPublished - 2007

Bibliographical note

Funding Information:
This work was supported by the Ministry of Commerce, Industry and Energy through the Standardization project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project.

Copyright 2008 Elsevier B.V., All rights reserved.


  • BaTiO thin film
  • Capacitors
  • Dielectric properties
  • Electrical properties

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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