We propose two designs of nanoscale sub-fF germanium photodiodes which are efficiently integrated with silicon waveguides. The metal-optic cavities are simulated with the finite difference time domain method and optimized using critical coupling concepts. One design is for a metal semiconductor metal photodiode with <200 aF capacitance, 39% external quantum efficiency, and 0.588 (λ/n)3 cavity volume at 1.5μm wavelength. The second design is for a vertical p-i-n photodiode with <100 aF capacitance, 51% external quantum efficiency, and 0.804 (λ/n)3 cavity volume. Both designs make use of CMOS compatible materials germanium and aluminum metal for potential future monolithic integration with silicon photonics.
|Number of pages||12|
|Publication status||Published - 2013 Sept 23|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics