Metal organic vapor phase epitaxy of BiSbTe3 films on (001) GaAs vicinal substrates

Jeong Hun Kim; Dae Yong Jeong; Jin Sang Kim; Byeong Kwon Ju

doi:10.1063/1.2399305

Metal organic vapor phase epitaxy of BiSbTe₃ films on (001) GaAs vicinal substrates

Jeong Hun Kim, Dae Yong Jeong, Jin Sang Kim, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We have investigated the growth of BiSb Te3 films by metal organic vapor phase epitaxy on (001) GaAs vicinal substrates. A detailed experimental study of the surface morphologies of BiSb Te3 films grown on GaAs (001) vicinal surfaces was carried out and is discussed in this paper with a view to understanding the step-step interaction kinetics that result in step bunching. BiSb Te3 layers grown on nominal (001) GaAs substrates exhibit triangular facet structures consisting of atomically flat plateau areas separated by steps. In contrast, the growth of films on vicinal substrates was found to result in regular arrays of terrace step structures. The formation of step bunches and rectangular terraces on such film surface is attributed to the preferential incorporation of adatoms at step or kink sites and lateral growth rate anisotropy.

Original language	English
Article number	123501
Journal	Journal of Applied Physics
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.2399305
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2399305

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title = "Metal organic vapor phase epitaxy of BiSbTe3 films on (001) GaAs vicinal substrates",

abstract = "We have investigated the growth of BiSb Te3 films by metal organic vapor phase epitaxy on (001) GaAs vicinal substrates. A detailed experimental study of the surface morphologies of BiSb Te3 films grown on GaAs (001) vicinal surfaces was carried out and is discussed in this paper with a view to understanding the step-step interaction kinetics that result in step bunching. BiSb Te3 layers grown on nominal (001) GaAs substrates exhibit triangular facet structures consisting of atomically flat plateau areas separated by steps. In contrast, the growth of films on vicinal substrates was found to result in regular arrays of terrace step structures. The formation of step bunches and rectangular terraces on such film surface is attributed to the preferential incorporation of adatoms at step or kink sites and lateral growth rate anisotropy.",

author = "Kim, {Jeong Hun} and Jeong, {Dae Yong} and Kim, {Jin Sang} and Ju, {Byeong Kwon}",

note = "Funding Information: This research was supported by a grant (Code No. 05K1501-02010) from the “ Center for Nanostructured Materials Technology ” under the “ 21st Century Frontier R&D Programs ” of the Ministry of Science and Technology, Korea ",

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doi = "10.1063/1.2399305",

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journal = "Journal of Applied Physics",

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T1 - Metal organic vapor phase epitaxy of BiSbTe3 films on (001) GaAs vicinal substrates

AU - Kim, Jeong Hun

AU - Jeong, Dae Yong

AU - Kim, Jin Sang

AU - Ju, Byeong Kwon

N1 - Funding Information: This research was supported by a grant (Code No. 05K1501-02010) from the “ Center for Nanostructured Materials Technology ” under the “ 21st Century Frontier R&D Programs ” of the Ministry of Science and Technology, Korea

PY - 2006

Y1 - 2006

N2 - We have investigated the growth of BiSb Te3 films by metal organic vapor phase epitaxy on (001) GaAs vicinal substrates. A detailed experimental study of the surface morphologies of BiSb Te3 films grown on GaAs (001) vicinal surfaces was carried out and is discussed in this paper with a view to understanding the step-step interaction kinetics that result in step bunching. BiSb Te3 layers grown on nominal (001) GaAs substrates exhibit triangular facet structures consisting of atomically flat plateau areas separated by steps. In contrast, the growth of films on vicinal substrates was found to result in regular arrays of terrace step structures. The formation of step bunches and rectangular terraces on such film surface is attributed to the preferential incorporation of adatoms at step or kink sites and lateral growth rate anisotropy.

AB - We have investigated the growth of BiSb Te3 films by metal organic vapor phase epitaxy on (001) GaAs vicinal substrates. A detailed experimental study of the surface morphologies of BiSb Te3 films grown on GaAs (001) vicinal surfaces was carried out and is discussed in this paper with a view to understanding the step-step interaction kinetics that result in step bunching. BiSb Te3 layers grown on nominal (001) GaAs substrates exhibit triangular facet structures consisting of atomically flat plateau areas separated by steps. In contrast, the growth of films on vicinal substrates was found to result in regular arrays of terrace step structures. The formation of step bunches and rectangular terraces on such film surface is attributed to the preferential incorporation of adatoms at step or kink sites and lateral growth rate anisotropy.

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JF - Journal of Applied Physics

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Metal organic vapor phase epitaxy of BiSbTe₃ films on (001) GaAs vicinal substrates

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