Metal oxide thin film phototransistor for remote touch interactive displays

Seung Eon Ahn; Ihun Song; Sanghun Jeon; Youg Woo Jeon; Young Kim; Changjung Kim; Byungki Ryu; Je Hun Lee; Arokia Nathan; Sungsik Lee; Gyu Tae Kim; U. In Chung

doi:10.1002/adma.201200293

Metal oxide thin film phototransistor for remote touch interactive displays

Seung Eon Ahn, Ihun Song, Sanghun Jeon, Youg Woo Jeon, Young Kim, Changjung Kim, Byungki Ryu, Je Hun Lee, Arokia Nathan, Sungsik Lee, Gyu Tae Kim, U. In Chung

Research output: Contribution to journal › Article › peer-review

137 Citations (Scopus)

Abstract

The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.

Original language	English
Pages (from-to)	2631-2636
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	19
DOIs	https://doi.org/10.1002/adma.201200293
Publication status	Published - 2012 May 15

Keywords

In-Ga-Zn-O/In-Zn-O
amorphous oxide semiconductors
phototransistors
remote in-cell touch
thin film transistors

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201200293

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@article{dceaac8033f84bb48bb6f79ec7fae090,

title = "Metal oxide thin film phototransistor for remote touch interactive displays",

abstract = "The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.",

keywords = "In-Ga-Zn-O/In-Zn-O, amorphous oxide semiconductors, phototransistors, remote in-cell touch, thin film transistors",

author = "Ahn, {Seung Eon} and Ihun Song and Sanghun Jeon and Jeon, {Youg Woo} and Young Kim and Changjung Kim and Byungki Ryu and Lee, {Je Hun} and Arokia Nathan and Sungsik Lee and Kim, {Gyu Tae} and Chung, {U. In}",

year = "2012",

month = may,

day = "15",

doi = "10.1002/adma.201200293",

language = "English",

volume = "24",

pages = "2631--2636",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "19",

}

TY - JOUR

T1 - Metal oxide thin film phototransistor for remote touch interactive displays

AU - Ahn, Seung Eon

AU - Song, Ihun

AU - Jeon, Sanghun

AU - Jeon, Youg Woo

AU - Kim, Young

AU - Kim, Changjung

AU - Ryu, Byungki

AU - Lee, Je Hun

AU - Nathan, Arokia

AU - Lee, Sungsik

AU - Kim, Gyu Tae

AU - Chung, U. In

PY - 2012/5/15

Y1 - 2012/5/15

N2 - The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.

AB - The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.

KW - In-Ga-Zn-O/In-Zn-O

KW - amorphous oxide semiconductors

KW - phototransistors

KW - remote in-cell touch

KW - thin film transistors

UR - http://www.scopus.com/inward/record.url?scp=84861029475&partnerID=8YFLogxK

U2 - 10.1002/adma.201200293

DO - 10.1002/adma.201200293

M3 - Article

C2 - 22499356

AN - SCOPUS:84861029475

SN - 0935-9648

VL - 24

SP - 2631

EP - 2636

JO - Advanced Materials

JF - Advanced Materials

IS - 19

ER -

Metal oxide thin film phototransistor for remote touch interactive displays

Abstract

Keywords

ASJC Scopus subject areas

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