Abstract
The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.
Original language | English |
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Pages (from-to) | 2631-2636 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 24 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2012 May 15 |
Keywords
- In-Ga-Zn-O/In-Zn-O
- amorphous oxide semiconductors
- phototransistors
- remote in-cell touch
- thin film transistors
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering