Metal oxide thin film phototransistor for remote touch interactive displays

Seung Eon Ahn; Ihun Song; Sanghun Jeon; Youg Woo Jeon; Young Kim; Changjung Kim; Byungki Ryu; Je Hun Lee; Arokia Nathan; Sungsik Lee; Gyu Tae Kim; U. In Chung

doi:10.1002/adma.201200293

Metal oxide thin film phototransistor for remote touch interactive displays

Seung Eon Ahn
, Ihun Song
, Sanghun Jeon^*
, Youg Woo Jeon
, Young Kim
, Changjung Kim
, Byungki Ryu
, Je Hun Lee
, Arokia Nathan
, Sungsik Lee
, Gyu Tae Kim
, U. In Chung

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

165 Citations (Scopus)

Abstract

The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.

Original language	English
Pages (from-to)	2631-2636
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	19
DOIs	https://doi.org/10.1002/adma.201200293
Publication status	Published - 2012 May 15

Keywords

In-Ga-Zn-O/In-Zn-O
amorphous oxide semiconductors
phototransistors
remote in-cell touch
thin film transistors

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201200293

Cite this

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title = "Metal oxide thin film phototransistor for remote touch interactive displays",

abstract = "The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.",

keywords = "In-Ga-Zn-O/In-Zn-O, amorphous oxide semiconductors, phototransistors, remote in-cell touch, thin film transistors",

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year = "2012",

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doi = "10.1002/adma.201200293",

language = "English",

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T1 - Metal oxide thin film phototransistor for remote touch interactive displays

AU - Ahn, Seung Eon

AU - Song, Ihun

AU - Jeon, Sanghun

AU - Jeon, Youg Woo

AU - Kim, Young

AU - Kim, Changjung

AU - Ryu, Byungki

AU - Lee, Je Hun

AU - Nathan, Arokia

AU - Lee, Sungsik

AU - Kim, Gyu Tae

AU - Chung, U. In

PY - 2012/5/15

Y1 - 2012/5/15

N2 - The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.

AB - The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.

KW - In-Ga-Zn-O/In-Zn-O

KW - amorphous oxide semiconductors

KW - phototransistors

KW - remote in-cell touch

KW - thin film transistors

UR - https://www.scopus.com/pages/publications/84861029475

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EP - 2636

JO - Advanced Materials

JF - Advanced Materials

IS - 19

ER -

Metal oxide thin film phototransistor for remote touch interactive displays

Abstract

Keywords

ASJC Scopus subject areas

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