Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

Ja Soon Jang; Seong Ju Park; Tae Yeon Seong

doi:10.1063/1.126510

Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

Ja Soon Jang, Seong Ju Park, Tae Yeon Seong

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67 Citations (Scopus)

Abstract

We report on a promising metallization scheme for high-quality Ohmic contacts to surface-treated p-GaN:Mg (2-3 × 10¹⁷cm^-3). It is shown that the as-deposited Pt/Ru contact produces a specific contact resistance of 7.8(±2.2) × 10^-4 Ω m². However, annealing of the contact at 6°C for 2 min results in a resistance of 2.2(± 2.0) × 10^-6 Ω cm². It is also shown that the light transmittance of the annealed contact is 87.3% at 470 nm. Furthermore, the surface of the contact annealed at 600°C for 30 min is found to be very smooth with a rms roughness of 0.8 nm. These results strongly indicate that the Pt/Ru can be a suitable scheme for the fabrication of high-performance laser diodes or other devices.

Original language	English
Pages (from-to)	2898-2900
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	20
DOIs	https://doi.org/10.1063/1.126510
Publication status	Published - 2000 May 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN",

abstract = "We report on a promising metallization scheme for high-quality Ohmic contacts to surface-treated p-GaN:Mg (2-3 × 1017cm-3). It is shown that the as-deposited Pt/Ru contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ω m2. However, annealing of the contact at 6°C for 2 min results in a resistance of 2.2(± 2.0) × 10-6 Ω cm2. It is also shown that the light transmittance of the annealed contact is 87.3% at 470 nm. Furthermore, the surface of the contact annealed at 600°C for 30 min is found to be very smooth with a rms roughness of 0.8 nm. These results strongly indicate that the Pt/Ru can be a suitable scheme for the fabrication of high-performance laser diodes or other devices.",

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AU - Jang, Ja Soon

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2000/5/15

Y1 - 2000/5/15

N2 - We report on a promising metallization scheme for high-quality Ohmic contacts to surface-treated p-GaN:Mg (2-3 × 1017cm-3). It is shown that the as-deposited Pt/Ru contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ω m2. However, annealing of the contact at 6°C for 2 min results in a resistance of 2.2(± 2.0) × 10-6 Ω cm2. It is also shown that the light transmittance of the annealed contact is 87.3% at 470 nm. Furthermore, the surface of the contact annealed at 600°C for 30 min is found to be very smooth with a rms roughness of 0.8 nm. These results strongly indicate that the Pt/Ru can be a suitable scheme for the fabrication of high-performance laser diodes or other devices.

AB - We report on a promising metallization scheme for high-quality Ohmic contacts to surface-treated p-GaN:Mg (2-3 × 1017cm-3). It is shown that the as-deposited Pt/Ru contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ω m2. However, annealing of the contact at 6°C for 2 min results in a resistance of 2.2(± 2.0) × 10-6 Ω cm2. It is also shown that the light transmittance of the annealed contact is 87.3% at 470 nm. Furthermore, the surface of the contact annealed at 600°C for 30 min is found to be very smooth with a rms roughness of 0.8 nm. These results strongly indicate that the Pt/Ru can be a suitable scheme for the fabrication of high-performance laser diodes or other devices.

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Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

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